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RJP60D0DPK

Silicon N Channel IGBT High Speed Power Switching

SiliconNChannelIGBTHighSpeedPowerSwitching Features ?Shortcircuitwithstandtime(5?styp.) ?Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(IC=22A,VGE=15V,Ta=25°C) ?Gatetoemittervoltagerating?30V ?Pb-freeleadplatingan

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RJP60D0DPK-00-T0

Silicon N Channel IGBT High Speed Power Switching

SiliconNChannelIGBTHighSpeedPowerSwitching Features ?Shortcircuitwithstandtime(5?styp.) ?Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(IC=22A,VGE=15V,Ta=25°C) ?Gatetoemittervoltagerating?30V ?Pb-freeleadplatingan

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RJP60D0DPK_15

Silicon N Channel IGBT High Speed Power Switching

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RJP60D0DPK-00#T0

包裝:管件 封裝/外殼:TO-220-3 整包 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 600V 45A 140W TO-3P

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

RJP60D0DPM

SiliconNChannelIGBTHighSpeedPowerSwitching

SiliconNChannelIGBTHighSpeedPowerSwitching Features ?Shortcircuitwithstandtime(5?styp.) ?Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(IC=22A,VGE=15V,Ta=25°C) ?Gatetoemittervoltagerating?30V ?Pb-freeleadplatingan

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

STB60D0

SURFACEMOUNTBIDIRECTIONALTRANSIENTVOLTAGESUPPRESSOR

EIC

EIC discrete Semiconductors

STB60D0

SURFACEMOUNTBIDIRECTIONALTRANSIENTVOLTAGESUPPRESSOR

EIC

EIC discrete Semiconductors

STU60D0

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

VBR:6.8-440Volts PPK:600Watts FEATURES: *600Wsurgecapabilityat1ms *Excellentclampingcapability *Lowzenerimpedance *Fastresponsetime:typicallylessthen1.0psfrom0volttoVBR(min.) *TypicalIRlessthen1mAabove10V *Pb/RoHSFree

EIC

EIC discrete Semiconductors

STU60D0

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

EIC

EIC discrete Semiconductors

SZ60D0

SURFACEMOUNTSILICONZENERDIODES

VOLTAGERANGE:3.3-200V POWER:5.0Watts Features ?CompleteVoltageRange3.3to200Volts ?Highpeakreversepowerdissipation ?Highreliability ?Lowleakagecurrent

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導(dǎo)體股份有限公司

SZ60D0

SURFACEMOUNTSILICONZENERDIODES

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導(dǎo)體股份有限公司

PDF上傳者:深圳市福田區(qū)吉富昌電子商行

SZ60D0

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導(dǎo)體股份有限公司

PDF上傳者:深圳市福田區(qū)吉富昌電子商行

SZ60D0

SURFACEMOUNTSILICONZENERDIODES

EIC

EIC discrete Semiconductors

SZ60D0

SURFACEMOUNTSILICONZENERDIODES

VZ:3.3-200Volts PD:5Watts FEATURES: *CompleteVoltageRange3.3to200Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent *Pb/RoHSFree

EIC

EIC discrete Semiconductors

詳細(xì)參數(shù)

  • 型號(hào):

    RJP60D0DPK

  • 制造商:

    RENESAS

  • 制造商全稱:

    Renesas Technology Corp

  • 功能描述:

    Silicon N Channel IGBT High Speed Power Switching

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
RENESAS/瑞薩
23+
TO-3P
10000
公司只做原裝正品
詢價(jià)
RENESAS/瑞薩
22+
TO-3P
6000
十年配單,只做原裝
詢價(jià)
RENESAS/瑞薩
23+
TO-3P
6000
原裝正品,支持實(shí)單
詢價(jià)
RENESAS/瑞薩
TO-3P
699839
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)
詢價(jià)
RENESAS/瑞薩
22+
TO-3P
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
詢價(jià)
瑞薩
24+
TO3P
58000
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)!
詢價(jià)
RENESAS/瑞薩
23+
TO-3P
842
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
RENESAS
24+
TO-3P
37650
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
詢價(jià)
RENESAS/瑞薩
24+
TO-3P
56000
公司進(jìn)口原裝現(xiàn)貨 批量特價(jià)支持
詢價(jià)
RENESAS
1809+
TO-3P
1675
就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件!
詢價(jià)
更多RJP60D0DPK供應(yīng)商 更新時(shí)間2025-1-13 14:30:00