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LD56100DPU30R

Marking:S30;1 A very low dropout fast transient ultra-low noise linear regulator

Description TheLD56100highaccuracyvoltageregulatorprovides1Aofcurrentfromaninput voltagerangingfrom1.8Vto5.5V,withatypicaldropoutvoltageof120mV. ItisavailableinDFN8(1.2x1.6mm)package,allowingthemaximumspacesaving. Thedeviceisstabilizedwithacerami

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BTS3011TE

Marking:S3011TE;Package:PG-TO252-5;Smart Low-Side Power Switch

Features ?Singlechanneldevice ?DigitalFeedback ?Currentlimitationtriggerconcept ?3.3and5Vcompatiblelogicinputs ?Electrostaticdischargeprotection(ESD) ?GreenProduct(RoHScompliant) ?AECQualified

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BTS3050EJ

Marking:S3050EJ;Package:PG-TDSO8-31;Smart Low-Side Power Switch

BasicFeatures ?Singlechanneldevice ?VerylowoutputleakagecurrentinOFFstate ?Electrostaticdischargeprotection(ESD) ?Embeddedprotectionfunctions(seebelow) ?ELVcompliantpackage ?GreenProduct(RoHScompliant) ?AECQualified

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

PBSS301NZ

Marking:S301NZ;Package:SC-73;12 V, 5.8 A NPN low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS301PZ

Marking:S301PZ;Package:SC-73;12 V, 5.7 A PNP low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS302NZ

Marking:S302NZ;Package:SC-73;20 V, 5.8 A NPN low VCEsat transistor

1.Generaldescription NPNlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS302PZ 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Highcollectorcur

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS302NZ-Q

Marking:S302NZ;Package:SC-73;20 V, 5.8 A NPN low VCEsat transistor

1.Generaldescription NPNlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Highcollectorcurrentgain(hFE)athighIC

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS302PZ

Marking:S302PZ;Package:SC-73;20 V, 5.5 A PNP low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS302PZ-Q

Marking:S302PZ;Package:SOT223;20 V, 5.5 A PNP low VCEsat transistor

1.Generaldescription PNPlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS302NZ-Q 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Highcollectorc

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS303NZ

Marking:S303NZ;Package:SC-73;30 V, 5.5 A NPN low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

晶體管資料

  • 型號(hào):

    S30-28

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-NPN

  • 性質(zhì):

  • 封裝形式:

  • 極限工作電壓:

    33V

  • 最大電流允許值:

    4A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

  • 可代換的型號(hào):

    3DK106B,

  • 最大耗散功率:

    65W

  • 放大倍數(shù):

  • 圖片代號(hào):

    NO

  • vtest:

    33

  • htest:

    999900

  • atest:

    4

  • wtest:

    65

詳細(xì)參數(shù)

  • 型號(hào):

    S30

  • 制造商:

    NOGA

  • 功能描述:

    DEBURRING BLADE PK10

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