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S9013M

TRANSISTOR

FEATURES HighCollectorCurrent.(IC=500mA) ComplementarytoS9012M ExcellenthFElinearity. APPLICATION 150mWOutputAmplifierofPotableRadiosinClassBPush-pullOperation. Forportableequipment:(i.e.Mobilephone,MP3,MD,CD-ROM,DVD-ROM,NotebookPC,etc.)

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司

S9013R

Plastic-EncapsulateTransistors

FEATURES ComplementarytoS9012 ExcellenthFElinearity

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

S9013T

NPNEpitaxialSiliconTransistor

FEATURE Powerdissipation PCM:0.625WTamb=25°C Collectorcurrent ICM:0.5A Collector-basevoltage V(BR)CBO:40V Operatingandstoragejunctiontemperaturerange Tj,Tstg:-55to+150°C

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

S9013-TA

Plastic-EncapsulateTransistors

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

S9013W

0.5A,40VNPNPlasticEncapsulatedTransistor

FEATURES ●HighCollectorCurrent ●ExcellentHFELinearity

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

S9013W

TRANSISTOR(NPN)

FEATURES ●HighCollectorCurrent ●ExcellentHFELinearity

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金譽(yù)半導(dǎo)體深圳市金譽(yù)半導(dǎo)體股份有限公司

S9013W

NPNSiliconEpitaxialPlanarTransistor

BILINChangzhou Galaxy Century Microelectronics Co.,Ltd.

銀河微電常州銀河世紀(jì)微電子股份有限公司

S9013W

NPNSiliconEpitaxialPlanarTransistor

FEATURES ●HighCollectorCurrent.(IC=500mA) ●ComplementaryToS9012. ●ExcellentHFELinearity. ●Powerdissipation.(PT=200mW) APPLICATIONS ●HighCollectorCurrent.

DSK

Diode Semiconductor Korea

S9013W

SOT-323Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●HighCollectorCurrent ●ExcellentHFELinearity

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司

S9013W

NPNSiliconEpitaxialPlanarTransistor

FEATURES ●HighCollectorCurrent.(IC=500mA) ●ComplementaryToS9012. ●ExcellentHFELinearity. ●Powerdissipation.(PT=200mW) APPLICATIONS ●HighCollectorCurrent.

BILINChangzhou Galaxy Century Microelectronics Co.,Ltd.

銀河微電常州銀河世紀(jì)微電子股份有限公司

S9013W

SOT-323Plastic-EncapsulateTransistors

FEATURES HighCollectorCurrent ExcellentHFELinearity

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

SM-BGA-9013

Highlycomplianttoaccommodatewideco-planarityvariations

IRONWOOD

Ironwood Electronics.

SM-QFN-9013

Lowandstablecontactresistanceforreliableproductionyield

IRONWOOD

Ironwood Electronics.

SS9013

1WOutputAmplifierofPotableRadiosinClassBPush-pullOperation.

1WOutputAmplifierofPotableRadiosinClassBPush-pullOperation. ?Hightotalpowerdissipation.(PT=625mW) ?HighCollectorCurrent.(IC=500mA) ?ComplementarytoSS9012 ?ExcellenthFElinearity.

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SS9013D

1WOutputAmplifierofPotableRadiosinClassBPush-pullOperation.

1WOutputAmplifierofPotableRadiosinClassBPush-pullOperation. ?Hightotalpowerdissipation.(PT=625mW) ?HighCollectorCurrent.(IC=500mA) ?ComplementarytoSS9012 ?ExcellenthFElinearity.

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SS9013E

1WOutputAmplifierofPotableRadiosinClassBPush-pullOperation.

1WOutputAmplifierofPotableRadiosinClassBPush-pullOperation. ?Hightotalpowerdissipation.(PT=625mW) ?HighCollectorCurrent.(IC=500mA) ?ComplementarytoSS9012 ?ExcellenthFElinearity.

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SS9013F

1WOutputAmplifierofPotableRadiosinClassBPush-pullOperation.

1WOutputAmplifierofPotableRadiosinClassBPush-pullOperation. ?Hightotalpowerdissipation.(PT=625mW) ?HighCollectorCurrent.(IC=500mA) ?ComplementarytoSS9012 ?ExcellenthFElinearity.

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SS9013G

1WOutputAmplifierofPotableRadiosinClassBPush-pullOperation.

1WOutputAmplifierofPotableRadiosinClassBPush-pullOperation. ?Hightotalpowerdissipation.(PT=625mW) ?HighCollectorCurrent.(IC=500mA) ?ComplementarytoSS9012 ?ExcellenthFElinearity.

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SS9013H

1WOutputAmplifierofPotableRadiosinClassBPush-pullOperation.

1WOutputAmplifierofPotableRadiosinClassBPush-pullOperation. ?Hightotalpowerdissipation.(PT=625mW) ?HighCollectorCurrent.(IC=500mA) ?ComplementarytoSS9012 ?ExcellenthFElinearity.

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

ST9013

NPNSiliconEpitaxialPlanarTransistor

forswitchingandamplifierapplications.EspeciallysuitableforAF-driverstagesandlowpoweroutputstages. Thetransistorissubdividedintothreegroups,G,HandI,accordingtoitsDCcurrentgain.AscomplementarytypethePNPtransistor9012isrecommended.

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半導(dǎo)體先之科半導(dǎo)體科技(東莞)有限公司

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更多S9013-LQ供應(yīng)商 更新時(shí)間2025-1-8 17:07:00