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PJS6603_S1_00001

Marking:SC3;Package:SOT-23-6L;30V Complementary Enhancement Mode MOSFET

Features ?AdvancedTrenchProcessTechnology ?SpeciallyDesignedforSwitchLoad,PWMApplication,etc. ?LeadfreeincompliancewithEURoHS2.0 ?GreenmoldingcompoundasperIEC61249standard

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

PJS6603_S2_00001

Marking:SC3;Package:SOT-23-6L;30V Complementary Enhancement Mode MOSFET

Features ?AdvancedTrenchProcessTechnology ?SpeciallyDesignedforSwitchLoad,PWMApplication,etc. ?LeadfreeincompliancewithEURoHS2.0 ?GreenmoldingcompoundasperIEC61249standard

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

PJS6603-AU_S1_000A1

Marking:SC3;Package:SOT-23-6L;30V Complementary Enhancement Mode MOSFET

Features ?AdvancedTrenchProcessTechnology ?SpeciallyDesignedforSwitchLoad,PWMApplication,etc. ?AEC-Q101qualified ?LeadfreeincompliancewithEURoHS2.0 ?GreenmoldingcompoundasperIEC61249standard

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

SN54SC4T32MPWTSEP

Marking:SC32SEP;Package:TSSOP;SN54SC4T32-SEP Radiation Tolerant, Quadruple 2-Input Positive-OR Gates With Integrated Translation

1Features ?Vendoritemdrawingavailable,VID V62/23629-01XE ?Totalionizingdosecharacterizedat30krad(Si) –Totalionizingdoseradiationlotacceptance testing(TIDRLAT)foreverywaferlotto30 krad(Si) ?Single-eventeffects(SEE)characterized: –Singleeventlatch-up(SEL)

TI1Texas Instruments

德州儀器

STPSC31H12CWY

Marking:SC31H12CWY;Package:TO-247;2 X 15 A, 1200 V power Schottky silicon carbide diode

Features ?AEC-Q101qualified ?Noornegligiblereverserecovery ?Switchingbehaviorindependentoftemperature ?Robusthigh-voltageperiphery ?PPAPcapable ?OperatingTjfrom-40°Cto175°C ?ECOPACK2compliant Applications ?OBC(onboardbatterychargers) ?PHEV-EVcharging

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

V62/23629-01XE

Marking:SC32SEP;Package:TSSOP;SN54SC4T32-SEP Radiation Tolerant, Quadruple 2-Input Positive-OR Gates With Integrated Translation

1Features ?Vendoritemdrawingavailable,VID V62/23629-01XE ?Totalionizingdosecharacterizedat30krad(Si) –Totalionizingdoseradiationlotacceptance testing(TIDRLAT)foreverywaferlotto30 krad(Si) ?Single-eventeffects(SEE)characterized: –Singleeventlatch-up(SEL)

TI1Texas Instruments

德州儀器

SC3203

Marking:SC3203;Package:SOIC8-EP5;3A EcoSpeed? Step-Down Regulator with Power Save

SEMTECH

Semtech Corporation

SC3203SETRC

Marking:SC3203;Package:SOIC8-EP5;3A EcoSpeed? Step-Down Regulator with Power Save

SEMTECH

Semtech Corporation

晶體管資料

  • 型號(hào):

    SC3120ST

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-NPN

  • 性質(zhì):

    微波 (MW)_靜噪放大 (LN)_寬頻帶放大 (A)

  • 封裝形式:

  • 極限工作電壓:

  • 最大電流允許值:

    0.05A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

  • 可代換的型號(hào):

  • 最大耗散功率:

    0.15W

  • 放大倍數(shù):

  • 圖片代號(hào):

    NO

  • vtest:

    0

  • htest:

    999900

  • atest:

    0.05

  • wtest:

    0.15

詳細(xì)參數(shù)

  • 型號(hào):

    SC3

  • 制造商:

    Ssac

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更多SC3供應(yīng)商 更新時(shí)間2025-1-26 15:30:00