首頁(yè)>SCTWA60N120G2AG>規(guī)格書(shū)詳情
SCTWA60N120G2AG中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
| 廠商型號(hào) |
SCTWA60N120G2AG |
| 功能描述 | Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 52 A in an HiP247 long leads package |
| 絲印標(biāo)識(shí) | |
| 封裝外殼 | HiP247 |
| 文件大小 |
242.46 Kbytes |
| 頁(yè)面數(shù)量 |
12 頁(yè) |
| 生產(chǎn)廠商 | STMicroelectronics |
| 企業(yè)簡(jiǎn)稱(chēng) |
STMICROELECTRONICS【意法半導(dǎo)體】 |
| 中文名稱(chēng) | 意法半導(dǎo)體集團(tuán)官網(wǎng) |
| 原廠標(biāo)識(shí) |  |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-1-18 11:08:00 |
SCTWA60N120G2AG規(guī)格書(shū)詳情
Features
? AEC-Q101 qualified
? Very fast and robust intrinsic body diode
? Extremely low gate charge and input capacitance
? Very high operating junction temperature capability (TJ = 200 °C)
Applications
? Main inverter (electric traction)
? DC/DC converter for EV/HEV
? On board charger (OBC)
Description
This silicon carbide Power MOSFET device has been developed using ST’s
advanced and innovative 2nd generation SiC MOSFET technology. The device
features remarkably low on-resistance per unit area and very good switching
performance. The variation of switching loss is almost independent of junction
temperature.
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ST(意法) |
2405+ |
HiP247 |
50000 |
只做原裝優(yōu)勢(shì)現(xiàn)貨庫(kù)存,渠道可追溯 |
詢價(jià) | ||
ST |
22+ |
N/A |
600 |
只做原裝正品 |
詢價(jià) | ||
ST/意法 |
22+ |
TO-247-4 |
3000 |
原裝正品 |
詢價(jià) | ||
24+ |
N/A |
64000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
ST |
2021+ |
NA |
100500 |
一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
詢價(jià) | ||
ST |
600 |
原裝正品老板王磊+13925678267 |
詢價(jià) | ||||
ST |
22+ |
NA |
10000 |
原裝正品支持實(shí)單 |
詢價(jià) | ||
24+ |
200 |
詢價(jià) | |||||
ST |
23+ |
QFN |
71200 |
只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
ST |
1190 |
只做正品 |
詢價(jià) |
