零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
SGB02N60 | FAST IGBT IN NPT TECHNOLOGY FastIGBTinNPT-technology ?75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
SGB02N60 | Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Package:TO-263-3,D2Pak(2 引線 + 接片),TO-263AB;包裝:管件 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 600V 6A 30W TO263-3 | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
FASTIGBTINNPTTECHNOLOGY FastIGBTinNPT-technology ?75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
FastIGBTinNPT-technology75lowerEoffcomparedtopreviousgeneration | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
FastIGBTinNPT-technology75lowerEoffcomparedtopreviousgeneration | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
FASTIGBTINNPTTECHNOLOGY FastIGBTinNPT-technology ?75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
詳細(xì)參數(shù)
- 型號:
SGB02N60
- 功能描述:
IGBT 晶體管 FAST IGBT NPT TECH 600V 2A
- RoHS:
否
- 制造商:
Fairchild Semiconductor
- 配置:
集電極—發(fā)射極最大電壓
- VCEO:
650 V
- 集電極—射極飽和電壓:
2.3 V
- 柵極/發(fā)射極最大電壓:
20 V 在25
- C的連續(xù)集電極電流:
150 A
- 柵極—射極漏泄電流:
400 nA
- 功率耗散:
187 W
- 封裝/箱體:
TO-247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
INFINEON/英飛凌 |
21+ |
TO-263 |
6000 |
原裝正品 |
詢價 | ||
英飛翎 |
17+ |
D2PAK(TO-263) |
31518 |
原裝正品 可含稅交易 |
詢價 | ||
INFINEON/英飛凌 |
2021+ |
TO-263 |
9000 |
原裝現(xiàn)貨,隨時歡迎詢價 |
詢價 | ||
INFINEON |
24+ |
P-TO263-3-2 |
8866 |
詢價 | |||
INFINEON |
17+ |
TO-263 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
INFINEON |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價 | ||
TOS |
23+ |
SOP |
50000 |
全新原裝假一賠十 |
詢價 | ||
INFINEON |
2023+ |
D2PAK(TO |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
INFINEON |
24+ |
TO-263 |
65300 |
一級代理/放心購買! |
詢價 | ||
INFINEON/英飛凌 |
22+ |
TO-263 |
20000 |
深圳原裝現(xiàn)貨正品有單價格可談 |
詢價 |
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