SI9910_V01中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書

FEATURES

dv/dt and di/dt Control

Undervoltage Protection

Short-Circuit Protection

trr Shoot-Through Current Limiting

Low Quiescent Current

CMOS Compatible Inputs

Compatible with Wide Range of MOSFET Devices

Bootstrap and Charge Pump Compatible

(High-Side Drive)

DESCRIPTION

The Si9910 Power MOSFET driver provides optimized gate

drive signals, protection circuitry and logic level interface. Very

low quiescent current is provided by a CMOS buffer and a

high-current emitter-follower output stage. This efficiency

allows operation in high-voltage bridge applications with

“bootstrap” or “charge-pump” floating power supply

techniques.

The non-inverting output configuration minimizes current

drain for an n-channel “on” state. The logic input is internally

diode clamped to allow simple pull-down in high-side drives.

Fault protection circuitry senses an undervoltage or output

short-circuit condition and disables the power MOSFET.

Addition of one external resistor limits maximum di/dt of the

external Power MOSFET. A fast feedback circuit may be used

to limit shoot-through current during trr (diode reverse recovery

time) in a bridge configuration.

The Si9910 is available in both standard and lead (Pb)-free

8-pin plastic DIP and SOIC packages which are specified to

operate over the industrial temperature range of ?40 C to

85 C.