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SIHG24N80AE

E Series Power MOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Loweffectivecapacitance(Co(er)) ?Reducedswitchingandconductionlosses ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS ?Serverandtelecompower

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHG24N80AEF

EF Series Power MOSFET With Fast Body Diode

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Loweffectivecapacitance(Co(er)) ?Reducedswitchingandconductionlosses ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS ?Serverandtelecompower

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IXFH24N80P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=24A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=400mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFH24N80P

PolarHVHiPerFETPowerMOSFET

IXYS

IXYS Corporation

IXFK24N80P

PolarHVHiPerFETPowerMOSFET

IXYS

IXYS Corporation

IXFK24N80P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=24A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFR24N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=13A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=420mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFR24N80P

PolarHVHiPerFETPowerMOSFET

IXYS

IXYS Corporation

IXFT24N80P

PolarHVHiPerFETPowerMOSFET

IXYS

IXYS Corporation

SIHA24N80AE

ESeriesPowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Loweffectivecapacitance(Co(er)) ?Reducedswitchingandconductionlosses ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS ?Serverandtelecompower

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHB24N80AE

ESeriesPowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Loweffectivecapacitance(Co(er)) ?Reducedswitchingandconductionlosses ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS ?Serverandtelecompower

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHP24N80AE

ESeriesPowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Loweffectivecapacitance(Co(er)) ?Reducedswitchingandconductionlosses ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS ?Serverandtelecompower

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHP24N80AEF

EFSeriesPowerMOSFETWithFastBodyDiode

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Loweffectivecapacitance(Co(er)) ?Reducedswitchingandconductionlosses ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS ?Serverandtelecompower

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

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VISHAY(威世)
23+
TO247
7350
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!!
 詢價(jià)
VishayVishay
NEW-
MOSFETs
100000
Trans MOSFET N-CH 800V 20A Tube
 詢價(jià)
VISHAY(威世)
23+
TO247AC
6000
誠(chéng)信服務(wù)，絕對(duì)原裝原盤
 詢價(jià)
VISHAY
2020+
TO-247
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增
 詢價(jià)
VISHAY/威世
23+
TO-247AC
10000
公司只做原裝正品
 詢價(jià)
VISHAY/威世
TO-247AC
22+
6000
十年配單,只做原裝
 詢價(jià)
ixys
2023+
TO-247
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
 詢價(jià)
VISHAY
23+
TO-247
12800
公司只有原裝 歡迎來(lái)電咨詢。
 詢價(jià)
VISHAY
TO-247
699839
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)
 詢價(jià)
VISHAY/威世
2022+
TO-247
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢價(jià)
更多SIHG24N80AE供應(yīng)商 更新時(shí)間2025-1-11 8:14:00

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