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SIHP24N80AEF

EF Series Power MOSFET With Fast Body Diode

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Loweffectivecapacitance(Co(er)) ?Reducedswitchingandconductionlosses ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS ?Serverandtelecompower

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IXFH24N80P

PolarHVHiPerFETPowerMOSFET

IXYS

IXYS Corporation

IXFH24N80P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=24A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=400mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFK24N80P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=24A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFK24N80P

PolarHVHiPerFETPowerMOSFET

IXYS

IXYS Corporation

IXFR24N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=13A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=420mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFR24N80P

PolarHVHiPerFETPowerMOSFET

IXYS

IXYS Corporation

IXFT24N80P

PolarHVHiPerFETPowerMOSFET

IXYS

IXYS Corporation

SIHA24N80AE

ESeriesPowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Loweffectivecapacitance(Co(er)) ?Reducedswitchingandconductionlosses ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS ?Serverandtelecompower

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHB24N80AE

ESeriesPowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Loweffectivecapacitance(Co(er)) ?Reducedswitchingandconductionlosses ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS ?Serverandtelecompower

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHG24N80AE

ESeriesPowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Loweffectivecapacitance(Co(er)) ?Reducedswitchingandconductionlosses ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS ?Serverandtelecompower

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHG24N80AEF

EFSeriesPowerMOSFETWithFastBodyDiode

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Loweffectivecapacitance(Co(er)) ?Reducedswitchingandconductionlosses ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS ?Serverandtelecompower

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHP24N80AE

ESeriesPowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Loweffectivecapacitance(Co(er)) ?Reducedswitchingandconductionlosses ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS ?Serverandtelecompower

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

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更多SIHP24N80AEF供應(yīng)商 更新時(shí)間2025-1-11 8:14:00

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