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SPB02N60C3

CoolMOSPowerTransistor

Features ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?QualifiedaccordingtoJEDEC0)fortargetapplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPB02N60C3

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SPB02N60C3

CoolMOSPowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPB02N60C3

N-Channel650V(D-S)MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

SPD02N60C3

N-Channel650V(D-S)MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

SPD02N60C3

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPD02N60C3

N-ChannelMOSFETTransistor

?DESCRITION ?Ultraloweffectivecapacitance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤3? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SPD02N60C3

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPD02N60C3

CoolMOSPowerTransistor

CoolMOS?PowerTransistor Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPN02N60C3

CoolMOS??PowerTransistor

Features ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Ultraloweffectivecapacitances ?Extremedv/dtrated ?QualifiedaccordingtoJEDEC0)fortargetapplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細參數(shù)

  • 型號：

    SIPC02N60C3

  • 功能描述：

    MOSFET COOLM

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
Infineon
24+
TO220-3
17900
MOSFET管
 詢價
INFINEON
23+
8000
只做原裝現(xiàn)貨
 詢價
INFINEON
23+
7000
詢價
INFINEON
1809+
SMD
3675
就找我吧!--邀您體驗愉快問購元件!
 詢價
Infineon Technologies
22+
9000
原廠渠道,現(xiàn)貨配單
 詢價
更多SIPC02N60C3供應商 更新時間2025-2-5 14:26:00

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