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零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

SKB06N60HS

High Speed IGBT in NPT-technology 30 lower Eoff compared to previous generation

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKB06N60HS

High Speed IGBT in NPT-technology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKB06N60HS_07

High Speed IGBT in NPT-technology 30 lower Eoff compared to previous generation

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

06N60E

N-CHANNELSILICONPOWERMOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica

FujiFuji Electric

富士電機富士電機株式會社

AIHD06N60R

IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIHD06N60RF

IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

CJP06N60

PowerfiledEffectTransistor

FEATURES ◆RobustHighVoltageTermination ◆AvalancheEnergySpecified ◆Source-to-DrainDiodeRecoveryTimeComparabletoa DiscreteFastRecoveryDiode ◆DiodeisCharacterizedforUseinBridgeCircuits ◆IDSSandVDS(on)SpecifiedatElevatedTemperature

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

CMT06N60

POWERFIELDEFFECTTRANSISTOR

CHAMPChampion Microelectronic Corp.

虹冠虹冠電子工業(yè)股份有限公司

CMT06N60

POWERFIELDEFFECTTRANSISTOR

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeffic

CHAMPChampion Microelectronic Corp.

虹冠虹冠電子工業(yè)股份有限公司

CMT06N60

POWERFIELDEFFECTTRANSISTOR

ETCList of Unclassifed Manufacturers

未分類制造商

EMD06N60A

N??hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS600V RDSON(MAX.)1.55Ω ID6A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

EMD06N60CS

N??hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS600V RDSON(MAX.)1.55Ω ID6A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

EMD06N60F

N??hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS600V RDSON(MAX.)1.55Ω ID6A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

FMC06N60ES

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FMC06N60ES

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士電機富士電機株式會社

FMI06N60ES

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士電機富士電機株式會社

FMP06N60E

N-CHANNELSILICONPOWERMOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica

FujiFuji Electric

富士電機富士電機株式會社

FMP06N60ES

N-CHANNELSILICONPOWERMOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.7±0.5V) Highavalanchedurability Applica

FujiFuji Electric

富士電機富士電機株式會社

FMP06N60ES

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FMV06N60E

N-CHANNELSILICONPOWERMOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica

FujiFuji Electric

富士電機富士電機株式會社

詳細參數(shù)

  • 型號：

    SKB06N60HS

  • 功能描述：

    IGBT 晶體管 HIGH SPEED NPT TECH 600V 6A

  • RoHS：

    否

  • 制造商：

    Fairchild Semiconductor

  • 配置：

    集電極—發(fā)射極最大電壓

  • VCEO：

    650 V

  • 集電極—射極飽和電壓：

    2.3 V

  • 柵極/發(fā)射極最大電壓：

    20 V 在25

  • C的連續(xù)集電極電流：

    150 A

  • 柵極—射極漏泄電流：

    400 nA

  • 功率耗散：

    187 W

  • 封裝/箱體：

    TO-247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
英飛翎
17+
TO-220
31518
原裝正品 可含稅交易
 詢價
INFINEON
24+
P-TO263-3-2
8866
詢價
西門康
10+
主營模塊
85
原裝正品,公司正品供應
 詢價
INFINEON
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
INFINEON
23+
TO-263
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
INFINEON
1822+
TO-220
9852
只做原裝正品假一賠十為客戶做到零風險!!
 詢價
INFINEON
18+
TO-220
41200
原裝正品,現(xiàn)貨特價
 詢價
INFINEON
2023+
PG-TO263
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
INFINEON
16+
MODULE
2100
公司大量全新現(xiàn)貨 隨時可以發(fā)貨
 詢價
PANASONIC/松下
23+
DIP-4
69820
終端可以免費供樣,支持BOM配單!
 詢價
更多SKB06N60HS供應商 更新時間2024-10-30 15:32:00

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