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04P10P

P-Channel100V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

04P10PL

P-Channel100V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

BZW04P10

TransientVoltageSuppressor

BREAKDOWNVOLTAGE:5.8---376VPEAKPULSEPOWER:400W Features ?Plasticpackagehasunderwriterslaboratoryflammabilityclassification94V-0 ?Glasspassivatedjunction ?400Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitionrate(dutycycle):0.01 ?Excellen

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

BZW04P10

AXIALLEADEDTRANSIENTVOLTAGESUPPRESSORSDIODES

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導(dǎo)體股份有限公司

BZW04P10

GLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSOR

MDEMDE semiconductor

MDE半導(dǎo)體MDE半導(dǎo)體公司

BZW04P10

GLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSOR

FEATURES ?PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O ?GlasspassivatedchipjunctioninDO-41package ?400Wsurgecapabilityat1ms ?Excellentclampingcapability ?Lowzenerimpedance ?Lowincrementalsurgeresistance ?Excellentclampingcapability

MDEMDE semiconductor

MDE半導(dǎo)體MDE半導(dǎo)體公司

BZW04P10

MINITYPELEDLAMPS

DBLECTRODB Lectro Inc

迪貝電子

BZW04P10

TRANSIENTVOLTAGESUPPRESSOR

VBR:6.8-440Volts PPK:400Watts FEATURES: *400Wsurgecapabilityat1ms *Excellentclampingcapability *Lowzenerimpedance *Fastresponsetime:typicallylessthen1.0psfrom0volttoVBR(min) *TypicalIRlessthen1mAabove10V

EIC

EIC discrete Semiconductors

BZW04P10

TransZorbTransientVoltageSuppressors

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BZW04P10

TRANSIENTVOLTAGESUPPRESSOR

BREAKDOWNVOLTAGE:5.8---376VPEAKPULSEPOWER:400W FEATURES ?Plasticpackagehasunderwriterslaboratoryflammabilityclassification94V-0 ?Glasspassivatedjunction ?400Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitionrate(dutycycle):0.01 ?Excellentclampingc

BILINGalaxy Semi-Conductor Holdings Limited

世紀(jì)微電子常州銀河世紀(jì)微電子股份有限公司

BZW04P10

TransientVoltageSuppressor

BREAKDOWNVOLTAGE:5.8---376VPEAKPULSEPOWER:400W Features ?Plasticpackagehasunderwriterslaboratoryflammabilityclassification94V-0 ?Glasspassivatedjunction ?400Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitionrate(dutycycle):0.01 ?Excellen

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

BZW04P10A

400WattsAxialLeadedTransientVoltageSuppressor

VOLTAGERANGE:5.8-376VPOWER:400Watts Features ●ConstructedwithGlassPassivatedDie ●UniandBidirectionalVersionsAvailable ●ExcellentClampingCapability ●FastResponseTime ●PlasticCaseMaterialhasULFlammabilityClassificationRating94V-O

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導(dǎo)體股份有限公司

BZW04P10B

GLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSOR

MDEMDE semiconductor

MDE半導(dǎo)體MDE半導(dǎo)體公司

BZW04P10B

TransientVoltageSuppressor

BREAKDOWNVOLTAGE:5.8---376VPEAKPULSEPOWER:400W Features ?Plasticpackagehasunderwriterslaboratoryflammabilityclassification94V-0 ?Glasspassivatedjunction ?400Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitionrate(dutycycle):0.01 ?Excellen

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

BZW04P10B

GLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSOR

FEATURES ?PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O ?GlasspassivatedchipjunctioninDO-41package ?400Wsurgecapabilityat1ms ?Excellentclampingcapability ?Lowzenerimpedance ?Lowincrementalsurgeresistance ?Excellentclampingcapability

MDEMDE semiconductor

MDE半導(dǎo)體MDE半導(dǎo)體公司

BZW04P10B

TRANSIENTVOLTAGESUPPRESSOR

BREAKDOWNVOLTAGE:5.8---376VPEAKPULSEPOWER:400W FEATURES ?Plasticpackagehasunderwriterslaboratoryflammabilityclassification94V-0 ?Glasspassivatedjunction ?400Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitionrate(dutycycle):0.01 ?Excellentclampingc

BILINGalaxy Semi-Conductor Holdings Limited

世紀(jì)微電子常州銀河世紀(jì)微電子股份有限公司

BZW04P10B

MINITYPELEDLAMPS

DBLECTRODB Lectro Inc

迪貝電子

BZW04P10B

GLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSORVOLTAGE-6.8to440Volts400WattsPeak1.0WattSteadyStae

VOLTAGE-6.8to440Volts400WattsPeak1.0WattSteadyStae FEATURES ■Plasticpackage ■GlasspassivatedchipjunctioninDO-41Package ■400Wsurgecapabilityat10/1000μswavefromExcellentclampingcapability ■Lowzenerimpedance ■Fastresponsetime:typicallylesst

DBLECTRODB Lectro Inc

迪貝電子

SPD04P10P

SIPMOS?Power-TransistorFeaturesP-ChannelEnhancementmode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPD04P10PG

SIPMOS?Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號:

    SPD04P10PLGXT

  • 制造商:

    Infineon

  • 功能描述:

    4.2A,100V Power MOSFET

  • 制造商:

    Infineon Technologies AG

供應(yīng)商型號品牌批號封裝庫存備注價格
Infineon
11+
2494
原裝正品長期供貨,如假包賠包換 徐小姐13714450367
詢價
Infineon
1708+
?
7500
只做原裝進(jìn)口,假一罰十
詢價
Infineontechnologies
2021++
原廠原裝
5850
原裝正品現(xiàn)貨 庫存價特價出貨
詢價
Infineon
23+
589610
新到現(xiàn)貨 原廠一手貨源 價格秒殺代理!
詢價
INFINEON
23+
N/A
8000
只做原裝現(xiàn)貨
詢價
INFINEON/英飛凌
21+
TO-252
9852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
詢價
INFINEON/英飛凌
19+PBF
TO-252-2
5389
就找我吧!--邀您體驗愉快問購元件!
詢價
INFINEON/英飛凌
23+
TO-252-2
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
INFINEON/英飛凌
2022
TO-252-2
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價
INFINEON/英飛凌
22+
TO252-3
21492
詢價
更多SPD04P10PLGXT供應(yīng)商 更新時間2024-11-15 14:30:00