首頁 >SPD04P10PLGXT>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
P-Channel100V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
P-Channel100V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
TransientVoltageSuppressor BREAKDOWNVOLTAGE:5.8---376VPEAKPULSEPOWER:400W Features ?Plasticpackagehasunderwriterslaboratoryflammabilityclassification94V-0 ?Glasspassivatedjunction ?400Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitionrate(dutycycle):0.01 ?Excellen | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 魯光電子深圳市魯光電子科技有限公司 | LUGUANG | ||
AXIALLEADEDTRANSIENTVOLTAGESUPPRESSORSDIODES | SUNMATESUNMATE electronic Co., LTD 森美特森美特半導(dǎo)體股份有限公司 | SUNMATE | ||
GLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSOR | MDEMDE semiconductor MDE半導(dǎo)體MDE半導(dǎo)體公司 | MDE | ||
GLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSOR FEATURES ?PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O ?GlasspassivatedchipjunctioninDO-41package ?400Wsurgecapabilityat1ms ?Excellentclampingcapability ?Lowzenerimpedance ?Lowincrementalsurgeresistance ?Excellentclampingcapability | MDEMDE semiconductor MDE半導(dǎo)體MDE半導(dǎo)體公司 | MDE | ||
MINITYPELEDLAMPS | DBLECTRODB Lectro Inc 迪貝電子 | DBLECTRO | ||
TRANSIENTVOLTAGESUPPRESSOR VBR:6.8-440Volts PPK:400Watts FEATURES: *400Wsurgecapabilityat1ms *Excellentclampingcapability *Lowzenerimpedance *Fastresponsetime:typicallylessthen1.0psfrom0volttoVBR(min) *TypicalIRlessthen1mAabove10V | EIC EIC discrete Semiconductors | EIC | ||
TransZorbTransientVoltageSuppressors | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
TRANSIENTVOLTAGESUPPRESSOR BREAKDOWNVOLTAGE:5.8---376VPEAKPULSEPOWER:400W FEATURES ?Plasticpackagehasunderwriterslaboratoryflammabilityclassification94V-0 ?Glasspassivatedjunction ?400Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitionrate(dutycycle):0.01 ?Excellentclampingc | BILINGalaxy Semi-Conductor Holdings Limited 世紀(jì)微電子常州銀河世紀(jì)微電子股份有限公司 | BILIN | ||
TransientVoltageSuppressor BREAKDOWNVOLTAGE:5.8---376VPEAKPULSEPOWER:400W Features ?Plasticpackagehasunderwriterslaboratoryflammabilityclassification94V-0 ?Glasspassivatedjunction ?400Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitionrate(dutycycle):0.01 ?Excellen | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 魯光電子深圳市魯光電子科技有限公司 | LUGUANG | ||
400WattsAxialLeadedTransientVoltageSuppressor VOLTAGERANGE:5.8-376VPOWER:400Watts Features ●ConstructedwithGlassPassivatedDie ●UniandBidirectionalVersionsAvailable ●ExcellentClampingCapability ●FastResponseTime ●PlasticCaseMaterialhasULFlammabilityClassificationRating94V-O | SUNMATESUNMATE electronic Co., LTD 森美特森美特半導(dǎo)體股份有限公司 | SUNMATE | ||
GLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSOR | MDEMDE semiconductor MDE半導(dǎo)體MDE半導(dǎo)體公司 | MDE | ||
TransientVoltageSuppressor BREAKDOWNVOLTAGE:5.8---376VPEAKPULSEPOWER:400W Features ?Plasticpackagehasunderwriterslaboratoryflammabilityclassification94V-0 ?Glasspassivatedjunction ?400Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitionrate(dutycycle):0.01 ?Excellen | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 魯光電子深圳市魯光電子科技有限公司 | LUGUANG | ||
GLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSOR FEATURES ?PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O ?GlasspassivatedchipjunctioninDO-41package ?400Wsurgecapabilityat1ms ?Excellentclampingcapability ?Lowzenerimpedance ?Lowincrementalsurgeresistance ?Excellentclampingcapability | MDEMDE semiconductor MDE半導(dǎo)體MDE半導(dǎo)體公司 | MDE | ||
TRANSIENTVOLTAGESUPPRESSOR BREAKDOWNVOLTAGE:5.8---376VPEAKPULSEPOWER:400W FEATURES ?Plasticpackagehasunderwriterslaboratoryflammabilityclassification94V-0 ?Glasspassivatedjunction ?400Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitionrate(dutycycle):0.01 ?Excellentclampingc | BILINGalaxy Semi-Conductor Holdings Limited 世紀(jì)微電子常州銀河世紀(jì)微電子股份有限公司 | BILIN | ||
MINITYPELEDLAMPS | DBLECTRODB Lectro Inc 迪貝電子 | DBLECTRO | ||
GLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSORVOLTAGE-6.8to440Volts400WattsPeak1.0WattSteadyStae VOLTAGE-6.8to440Volts400WattsPeak1.0WattSteadyStae FEATURES ■Plasticpackage ■GlasspassivatedchipjunctioninDO-41Package ■400Wsurgecapabilityat10/1000μswavefromExcellentclampingcapability ■Lowzenerimpedance ■Fastresponsetime:typicallylesst | DBLECTRODB Lectro Inc 迪貝電子 | DBLECTRO | ||
SIPMOS?Power-TransistorFeaturesP-ChannelEnhancementmode | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
SIPMOS?Power-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
詳細(xì)參數(shù)
- 型號:
SPD04P10PLGXT
- 制造商:
Infineon
- 功能描述:
4.2A,100V Power MOSFET
- 制造商:
Infineon Technologies AG
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Infineon |
11+ |
2494 |
原裝正品長期供貨,如假包賠包換 徐小姐13714450367 |
詢價 | |||
Infineon |
1708+ |
? |
7500 |
只做原裝進(jìn)口,假一罰十 |
詢價 | ||
Infineontechnologies |
2021++ |
原廠原裝 |
5850 |
原裝正品現(xiàn)貨 庫存價特價出貨 |
詢價 | ||
Infineon |
23+ |
589610 |
新到現(xiàn)貨 原廠一手貨源 價格秒殺代理! |
詢價 | |||
INFINEON |
23+ |
N/A |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
INFINEON/英飛凌 |
21+ |
TO-252 |
9852 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價 | ||
INFINEON/英飛凌 |
19+PBF |
TO-252-2 |
5389 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
INFINEON/英飛凌 |
23+ |
TO-252-2 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
INFINEON/英飛凌 |
2022 |
TO-252-2 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
INFINEON/英飛凌 |
22+ |
TO252-3 |
21492 |
詢價 |
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