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SPP11N60C2

Marking：11N60C2；Package：P-TO220-3-1；Cool MOS??Power Transistor

Feature 1.Newrevolutionaryhighvoltagetechnology 2.Ultralowgatecharge 3.Periodicavalancherated 4.Extremedv/dtrated 5.Ultraloweffectivecapacitances

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP11N60C2

N-Channel 650 V (D-S) MOSFET

Features ?LowVCE(sat). VCE(sat)=-0.55V(Typ.)(IC/IB=-4A/-0.1A) ?ExcellentDCcurrentgaincharacteristics. Structure EpitaxialplanartypePNPsilicontransistor

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

SPP11N60C3

Cool MOS??Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP11N60C3

Cool MOS Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?150°Coperatingtemperature

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP11N60C3

N-Channel MOSFET Transistor

?DESCRITION ?Ultralowgatecharge ?Highpeakcurrentcapability ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.38? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice perform

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

SPP11N60C3

N-Channel 650 V (D-S) MOSFET

FEATURES ?Reducedtrr,Qrr,andIRRM ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?LowswitchinglossesduetoreducedQrr ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS)

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

SPP11N60CFD

N-Channel MOSFET Transistor

?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤0.44? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

SPP11N60CFD

N-Channel 650 V (D-S) MOSFET

FEATURES ?Reducedtrr,Qrr,andIRRM ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?LowswitchinglossesduetoreducedQrr ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS)

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

SPP11N60CFD

Cool MOS??Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Intrinsicfast-recoverybodydiode ?Extremelowreverserecoverycharge

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP11N60C3

Marking：11N60C3；Package：PG-TO220；Cool MOS??Power Transistor Feature New revolutionary high voltage technology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號(hào)：

    SPP11N60C

  • 制造商：

    INFINEON

  • 制造商全稱(chēng)：

    Infineon Technologies AG

  • 功能描述：

    Cool MOS⑩ Power Transistor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
INFINE
2410+
to-220
28000
原裝正品.假一賠百.正規(guī)渠道.原廠(chǎng)追溯.
 詢(xún)價(jià)
INFINEON
24+
TO-220
19
詢(xún)價(jià)
INFINEON
23+
TO-220
6680
全新原裝優(yōu)勢(shì)
 詢(xún)價(jià)
INF
16+
TO-220
10000
全新原裝現(xiàn)貨
 詢(xún)價(jià)
INFINEON
23+
NA
19960
只做進(jìn)口原裝,終端工廠(chǎng)免費(fèi)送樣
 詢(xún)價(jià)
INFINEON
22+
TO-3P
9000
原裝現(xiàn)貨庫(kù)存.價(jià)格優(yōu)勢(shì)
 詢(xún)價(jià)
INFINEON
23+
TO-220
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢(xún)價(jià)
infine
22+23+
to-220
24798
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢(xún)價(jià)
infineon
1822+
TO-220
9852
只做原裝正品假一賠十為客戶(hù)做到零風(fēng)險(xiǎn)!!
 詢(xún)價(jià)
infineon
18+
TO-220
41200
原裝正品,現(xiàn)貨特價(jià)
 詢(xún)價(jià)
更多SPP11N60C供應(yīng)商 更新時(shí)間2025-3-10 16:11:00

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