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11N60C3

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

ISPP11N60C3

N-ChannelMOSFETTransistor

?DESCRITION ?Ultralowgatecharge ?Highpeakcurrentcapability ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.38? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice perform

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

ISPW11N60C3

iscN-ChannelMOSFETTransistor

?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤380m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPA11N60C3

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA11N60C3

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA11N60C3

CoolMOS??PowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA11N60C3

iscN-ChannelMOSFETTransistor

?FEATURES ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Highpeakcurrentcapability ?Improvedtransconductance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPA11N60C3

N-Channel650V(D-S)PowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS)

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

SPB11N60C3

N-Channel650V(D-S)MOSFET

FEATURES ?Reducedtrr,Qrr,andIRRM ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?LowswitchinglossesduetoreducedQrr ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) APPLICATIONS ?Telecommunications -Serverandtelecompowersupplies ?Light

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

SPB11N60C3

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPB11N60C3

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPB11N60C3

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPB11N60C3

CoolMOSPowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?150°Coperatingtemperature

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPBI11N60C3

CoolMOSPowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?150°Coperatingtemperature

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPI11N60C3

iscN-ChannelMOSFETTransistor

?DESCRITION ?Ultralowgatecharge ?Highpeakcurrentcapability ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.38? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice perform

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPI11N60C3

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPI11N60C3

CoolMOS??PowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPI11N60C3

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPI11N60C3

CoolMOSPowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?150°Coperatingtemperature

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP11N60C3

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細參數(shù)

  • 型號：

    SPW11N60C3XK

  • 制造商：

    Infineon Technologies AG

  • 功能描述：

    TRANS MOSFET N-CH 600V 11A 3PIN TO-247 - Rail/Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON
23+
8000
只做原裝現(xiàn)貨
 詢價
INFINEON/英飛凌
2023+
TO-247
5069
AI智能識別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站
 詢價
Infineon
2023+
TO-247
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
Infineon
21+
TO-247
35210
一級代理/放心采購
 詢價
INFINEON
24+
PG-TO247-3
8866
詢價
Infineon
17+
TO-3P
6200
詢價
infineo
2020+
TO-3P
480
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
Infineon
23+
TO-247
7750
全新原裝優(yōu)勢
 詢價
INFINEON
23+
TO3P
12335
詢價
INFINEON
2018+
TO247
6528
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫存放心
 詢價
更多SPW11N60C3XK供應(yīng)商 更新時間2024-11-15 15:00:00

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