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SPW12N50C3

isc N-Channel MOSFET Transistor

?DESCRITION ?ImprovedTransconductance ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤380m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SPW12N50C3

Cool MOS Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC0)fortargetapplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPW12N50C3

COOL MOS POWER TRANSISTOR

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPW12N50C3_08

COOL MOS POWER TRANSISTOR

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

12N50C3

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

12N50C3

CoolMOSPowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC0)fortargetapplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

ISPP12N50C3

N-ChannelMOSFETTransistor

?DESCRITION ?Newrevolutionaryhighvoltagetechnology ?Ultraloweffectivecapacitance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.6? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performancean

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

ISPP12N50C3

N-ChannelMOSFETTransistor

?DESCRITION ?Newrevolutionaryhighvoltagetechnology ?Ultraloweffectivecapacitance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.6? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performancean

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

ISPW12N50C3

iscN-ChannelMOSFETTransistor

?DESCRITION ?ImprovedTransconductance ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤380m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SPA12N50C3

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220FPackage ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplica

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號：

    SPW12N50C3

  • 功能描述：

    MOSFET COOL MOS N-CH 560V 11.6A

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
INFINEON
23+
TO247
6996
只做原裝正品現(xiàn)貨
 詢價
INFINEON/英飛凌
24+
TO-247
12
只做原廠渠道 可追溯貨源
 詢價
英飛翎
17+
TO-247
31518
原裝正品 可含稅交易
 詢價
Infineon(英飛凌)
23+
TO-247
7793
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
SIPEXCORPOR
24+
原廠封裝
7975
原裝現(xiàn)貨假一罰十
 詢價
Infineon
17+
TO-3P
6200
詢價
INFINEON
2016+
to247
6000
公司只做原裝,假一罰十,可開17%增值稅發(fā)票!
 詢價
Infineon
23+
TO-220FP
7750
全新原裝優(yōu)勢
 詢價
INFINEON
24+
TO-247
5000
只做原裝公司現(xiàn)貨
 詢價
INFINEON
2018+
TO247
6528
只做原裝正品假一賠十!只要網上有上百分百有庫存放心
 詢價
更多SPW12N50C3供應商 更新時間2025-1-27 14:24:00

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