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SPW35N60CFD

N-Channel MOSFET Transistor

?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤118m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SPW35N60CFD

CoolMOS Power Transistor

Features ?Newrevolutionaryhighvoltagetechnology ?Intrinsicfast-recoverybodydiode ?Extremelylowreverserecoverycharge ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?Periodicavalancherated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPW35N60CFD

CoolMOSTM Power Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPW35N60CFD_08

CoolMOSTM Power Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

35N60A

35A600VN-channelenhancedfieldeffecttransistor

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風微電子廣東佑風微電子有限公司

DAM35N60F

N-ChannelEnhancementModeMOSFET

DACO

DACO SEMICONDUCTOR CO.,LTD.

DAM35N60H

N-ChannelEnhancementModeMOSFET

DACO

DACO SEMICONDUCTOR CO.,LTD.

FCA35N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=35A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=79mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FCA35N60

600VN-ChannelMOSFET

Description SuperFET?isFarichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Features ?650V@TJ=150°C ?Typ.RDS(on)=0.079? ?Ultralow

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FCA35N60

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FCH35N60

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FCH35N60

N-ChannelSuperFET?MOSFET

Description SuperFET?MOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thistechnologyistailoredtominimizeconductionloss,

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FGW35N60H

DiscreteIGBT(High-SpeedVseries)600V/35A

Features Lowpowerloss Lowswitchingsurgeandnoise Highreliability,highruggedness(RBSOA,SCSOAetc.) Applications Uninterruptiblepowersupply Powercoditionner Powerfactorcorrectioncircuit

FujiFuji Electric

富士電機富士電機株式會社

FGW35N60HD

DiscreteIGBT(High-SpeedVseries)600V/35A

600V/35A Features Lowpowerloss Lowswitchingsurgeandnoise Highreliability,highruggedness(RBSOA,SCSOAetc.) Applications Uninterruptiblepowersupply Powercoditionner Powerfactorcorrectioncircuit

FujiFuji Electric

富士電機富士電機株式會社

ICE35N60W

N-ChannelEnhancementModeMOSFET

ICEMOS

Icemos Technology

ICE35N60W

N-ChannelEnhancementModeMOSFET

MICROSS

Micross Components

ISPW35N60CFD

N-ChannelMOSFETTransistor

?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤118m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXDH35N60B

IGBTwithoptionalDiode

HighSpeed,LowSaturationVoltage Features ●NPTIGBTtechnology ●lowswitchinglosses ●lowtailcurrent ●nolatchup ●shortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●MOSinput,voltagecontrolled ●optionalultrafastdiode ●Internationalstandard

IXYS

IXYS Corporation

IXDP35N60B

IGBTwithoptionalDiode

HighSpeed,LowSaturationVoltage Features ●NPTIGBTtechnology ●lowswitchinglosses ●lowtailcurrent ●nolatchup ●shortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●MOSinput,voltagecontrolled ●optionalultrafastdiode ●Internationalstandard

IXYS

IXYS Corporation

SIHB35N60E

ESeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

詳細參數(shù)

  • 型號：

    SPW35N60CFD

  • 功能描述：

    MOSFET COOL MOS N-CH 600V 34.1A

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON
23+
TO-247
95260
詢價
INFINEON
2020+
TO247
18600
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
Infineon(英飛凌)
23+
N/A
12000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
INFINEON TECHNOLOGIES AG
23+
SMD
918000
明嘉萊只做原裝正品現(xiàn)貨
 詢價
INFINEON
23+
NA
15000
原裝現(xiàn)貨,實單價格可談
 詢價
Infineon(英飛凌)
23+
TO-247
7962
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
INFINEON
2023
TO-247
2580
原廠代理渠道,正品保障
 詢價
INFINEON
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
INFINEON
10+
TO-247
5000
全新原裝現(xiàn)貨
 詢價
Infineon
23+
TO-247
1500
絕對全新原裝!優(yōu)勢供貨渠道!特價!請放心訂購!
 詢價
更多SPW35N60CFD供應(yīng)商 更新時間2025-1-14 14:00:00

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