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首頁 >STB13NM60ND>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
STB13NM60ND	文件：312.46 Kbytes Page：2 Pages	isc N-Channel Mosfet Transistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
STD13NM60N	文件：1.16058 Mbytes Page：24 Pages	Lowgateinputresistance Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
STD13NM60N	文件：989.75 Kbytes Page：21 Pages	N-channel600V,0.28廓typ.,11AMDmesh??IIPowerMOSFETinTO-220FP,I?PAK,TO-220,IPAK,TO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
STD13NM60N	文件：300.57 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
STD13NM60ND	文件：323.25 Kbytes Page：2 Pages	iscN-ChannelMosfetTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
STD13NM60ND	文件：1.55172 Mbytes Page：21 Pages	N-channel600V,0.32typ.,11A,FDmeshIIPowerMOSFET(withfastdiode)inDPAK Description TheseFDmesh?IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
STF13NM60N	文件：989.75 Kbytes Page：21 Pages	N-channel600V,0.28ohmtyp.,11AMDmeshIIPowerMOSFETinTO-220FP,I2PAK,TO-220,IPAK,TO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
STF13NM60N	文件：989.75 Kbytes Page：21 Pages	N-channel600V,0.28廓typ.,11AMDmesh??IIPowerMOSFETinTO-220FP,I?PAK,TO-220,IPAK,TO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
STF13NM60N	文件：1.07167 Mbytes Page：9 Pages	N-Channel650V(D-S)PowerMOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司	VBSEMI
STF13NM60N	文件：313.02 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
STF13NM60ND	文件：1.07075 Mbytes Page：9 Pages	N-Channel650V(D-S)PowerMOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司	VBSEMI
STF13NM60ND	文件：1.55172 Mbytes Page：21 Pages	N-channel600V,0.32typ.,11A,FDmeshIIPowerMOSFET(withfastdiode)inDPAK Description TheseFDmesh?IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
STF13NM60N-H	文件：791.51 Kbytes Page：13 Pages	N-channel600V,0.28廓,11AMDmesh??IIPowerMOSFETinTO-220FP	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
STFI13NM60N	文件：782.35 Kbytes Page：12 Pages	N-channel600V,0.28廓,11AMDmesh??IIPowerMOSFETinI?PAKFPpackage Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
STI13NM60N	文件：989.75 Kbytes Page：21 Pages	N-channel600V,0.28ohmtyp.,11AMDmeshIIPowerMOSFETinTO-220FP,I2PAK,TO-220,IPAK,TO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
STI13NM60N	文件：334.4 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor ?FEATURES ?DrainCurrent–ID=11A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=360mΩ(Max) ?100avalanchetested ?Lowinputcapacitanceandgatecharge ?MinimumLot-to-Lotvariationsforrobustdevice performanceandrelia	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
STL13NM60N	文件：835.94 Kbytes Page：14 Pages	N-channel600V,0.320廓,10APowerFLAT??(8x8)HVMDmesh??IIPowerMOSFET Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
STP13NM60N	文件：989.75 Kbytes Page：21 Pages	N-channel600V,0.28ohmtyp.,11AMDmeshIIPowerMOSFETinTO-220FP,I2PAK,TO-220,IPAK,TO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
STP13NM60N	文件：318.25 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
STP13NM60ND	文件：1.55172 Mbytes Page：21 Pages	N-channel600V,0.32typ.,11A,FDmeshIIPowerMOSFET(withfastdiode)inDPAK Description TheseFDmesh?IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS

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供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價(jià)格
深圳市恒創(chuàng)達(dá)實(shí)業(yè)有限公司	STB13NM60NT4	ST	17+	D2PAK	6200		詢價(jià)
深圳市賽特興科技有限公司	STB13NM60NT4	ST	23+	D2PAK	16900	正規(guī)渠道,只有原裝!	詢價(jià)
中科航電（深圳）電子集團(tuán)有限公司	STB13NM60NT4	ST		D2PAK	36900	集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)	詢價(jià)
深圳市星佑電子有限公司	STB13NM60NT4	ST	22+	D2PAK	16900	支持樣品原裝現(xiàn)貨提供技術(shù)支持!	詢價(jià)
深圳市外芯人半導(dǎo)體有限公司	STB13NM60NT4	ST	24+	D2PAK	200000	原裝進(jìn)口正口,支持樣品	詢價(jià)
深圳市佳杰偉業(yè)科技有限公司	STB13NM60NT4	ST	2315+	D2PAK	3866	優(yōu)勢代理渠道,原裝現(xiàn)貨,可全系列訂貨	詢價(jià)
深圳市東來寶電子科技有限公司	STB13NM60N貼片三極管	ST/意法	22+	TO-263	50000	鄭重承諾只做原裝進(jìn)口現(xiàn)貨	詢價(jià)
深圳和潤天下電子科技有限公司	STB13NM60N貼片三極管	ST/意法	22+	D2PAK	24098		詢價(jià)
深圳市斌騰達(dá)科技有限公司	STB140N4F6	STMicroelectronics	21+	D2PAK	1000	100%進(jìn)口原裝!長期供應(yīng)!絕對優(yōu)勢價(jià)格(誠信經(jīng)營)!	詢價(jià)
深圳市科恒偉業(yè)電子有限公司	STB140N4F6	ST/意法	22+	TO-263	5623	只做原裝正品現(xiàn)貨!或訂貨假一賠十!	詢價(jià)

更多STB13NM60ND供應(yīng)商更新時(shí)間2024-11-17 16:00:00

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