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STB28NM60ND

N-channel 600 V, 0.13 廓 typ., 23 A FDmesh??II Power MOSFETs in D?PAK, TO-220FP, TO-220 and TO-247 packages

Description TheseFDmesh?IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB28NM60ND

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STF28NM60ND

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STF28NM60ND

N-channel600V,0.13廓typ.,23AFDmesh??IIPowerMOSFETsinD?PAK,TO-220FP,TO-220andTO-247packages

Description TheseFDmesh?IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP28NM60ND

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STP28NM60ND

N-channel600V,0.13廓typ.,23AFDmesh??IIPowerMOSFETsinD?PAK,TO-220FP,TO-220andTO-247packages

Description TheseFDmesh?IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STW28NM60ND

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STW28NM60ND

N-channel600V,0.13廓typ.,23AFDmesh??IIPowerMOSFETsinD?PAK,TO-220FP,TO-220andTO-247packages

Description TheseFDmesh?IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào)：

    STB28NM60ND

  • 制造商：

    STMicroelectronics

  • 功能描述：

    N-CHANNEL 600 V, 0.120 OHM TYP., 24 A FDMESH(TM) II POWER MO - Tape and Reel

  • 功能描述：

    N-CHANNEL 600 V, 0.120 OHM TYP., 24 A FDMESH(TM) II POWER MO - Cut TR(SOS)

  • 功能描述：

    MOSFET N-CH 600V 24A D2PAK

  • 功能描述：

    MOSFET N-CH 600V 23A D2PAK

  • 功能描述：

    600V, 0.120 OHM, 24A, POWERFET W/ FAST DIODE, N-CHANNEL, D2PAK

  • 功能描述：

    Single N-Channel 600 V 0.15 Ohm 190 W Surface Mount Power Mosfet - D2PAK-3

  • 功能描述：

    Nchnl 600 V 0120 Ohm typ 24 A Pwr MOSFET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ST/意法
24+
TO-263-3
860000
明嘉萊只做原裝正品現(xiàn)貨
 詢價(jià)
STM
21+
D2PAK
1000
原裝正品 有掛有貨
 詢價(jià)
ST/意法
24+
TO-263
2000
只做原廠渠道 可追溯貨源
 詢價(jià)
STM
21+
1000
D2PAK
 詢價(jià)
STM
23+
D2PAK
1000
原裝現(xiàn)貨支持送檢
 詢價(jià)
STMicroelectronics
18+
NA
3671
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
 詢價(jià)
STMicroelectronics
21+
D2PAK
1000
100%進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng))!
 詢價(jià)
STM
1809+
TO-263
326
就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件!
 詢價(jià)
ST/意法
23+
TO-263
10000
公司只做原裝正品
 詢價(jià)
22+
NA
3000
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
更多STB28NM60ND供應(yīng)商 更新時(shí)間2025-1-9 8:09:00

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