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STB36NM60ND

Marking：36NM60ND；Package：D2PAK；Automotive-grade N-channel 600 V, 0.097 typ., 29 A FDmesh II

Description TheseFDmesh?IIPowerMOSFETswith intrinsicfast-recoverybodydiodeareproduced usingthesecondgenerationofMDmesh? technology.Utilizinganewstrip-layoutvertical structure,theserevolutionarydevicesfeature extremelylowon-resistanceandsuperior switchingperforma

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

36NM60N

Automotive-gradeN-channel600V,0.093Ω,29A,MDmesh?IIPowerMOSFETinaD2PAKpackage

Features ?Designedforautomotiveapplicationsand AEC-Q101qualified ?100avalanchetested ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance Applications ?Switchingapplications Description ThisdeviceisanN-channelPowerMOSFET developedusingthesecondgene

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STB36NM60N

Automotive-gradeN-channel600V,0.093Ω,29A,MDmesh?IIPowerMOSFETinaD2PAKpackage

Features ?Designedforautomotiveapplicationsand AEC-Q101qualified ?100avalanchetested ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance Applications ?Switchingapplications Description ThisdeviceisanN-channelPowerMOSFET developedusingthesecondgene

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STB36NM60N

Automotive-gradeN-channel600V,0.097typ.,29AFDmeshII

Description TheseFDmesh?IIPowerMOSFETswith intrinsicfast-recoverybodydiodeareproduced usingthesecondgenerationofMDmesh? technology.Utilizinganewstrip-layoutvertical structure,theserevolutionarydevicesfeature extremelylowon-resistanceandsuperior switchingperforma

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STW36NM60N

N-channel600V,0.092Ω,29A,MDmesh?IIPowerMOSFETinTO-247

Features ■100avalanchetested ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance Application ■Switchingapplications –Automotive Description Thisdeviceismadeusingthesecondgeneration ofMDmesh?technology.Thisrevolutionary PowerMOSFETassociatesanewve

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STW36NM60ND

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=29A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.11Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STW36NM60ND

Automotive-gradeN-channel600V,0.097typ.,29AFDmeshII

Description TheseFDmesh?IIPowerMOSFETswith intrinsicfast-recoverybodydiodeareproduced usingthesecondgenerationofMDmesh? technology.Utilizinganewstrip-layoutvertical structure,theserevolutionarydevicesfeature extremelylowon-resistanceandsuperior switchingperforma

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

詳細參數(shù)

  • 型號：

    STB36NM60ND

  • 制造商：

    STMicroelectronics

  • 功能描述：

    POWER MOSFET - Tape and Reel

供應(yīng)商型號品牌批號封裝庫存備注價格
STM
23+
D2PAK
2000
原裝現(xiàn)貨支持送檢
 詢價
ST
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
STMicroelectronics
18+
NA
3000
進口原裝正品優(yōu)勢供應(yīng)
 詢價
STMicroelectronics
21+
D2PAK
1000
進口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營)!!
 詢價
ST(意法半導(dǎo)體)
2112+
D2PAK
105000
1000個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,
 詢價
STM
1809+
TO-263
326
就找我吧!--邀您體驗愉快問購元件!
 詢價
ST/意法半導(dǎo)體
21+
TO-263-3
6000
原裝現(xiàn)貨
 詢價
ST(意法)
23+
NA
20094
正納10年以上分銷經(jīng)驗原裝進口正品做服務(wù)做口碑有支持
 詢價
ST/意法半導(dǎo)體
21+
TO-263-3
6000
原裝正品
 詢價
22+
NA
3000
加我QQ或微信咨詢更多詳細信息,
 詢價
更多STB36NM60ND供應(yīng)商 更新時間2025-1-8 10:38:00

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