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STW36NM60N

N-channel 600 V, 0.092 Ω, 29 A, MDmesh? II Power MOSFET in TO-247

Features ■100avalanchetested ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance Application ■Switchingapplications –Automotive Description Thisdeviceismadeusingthesecondgeneration ofMDmesh?technology.Thisrevolutionary PowerMOSFETassociatesanewve

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

STW36NM60ND

Automotive-grade N-channel 600 V, 0.097 typ., 29 A FDmesh II

Description TheseFDmesh?IIPowerMOSFETswith intrinsicfast-recoverybodydiodeareproduced usingthesecondgenerationofMDmesh? technology.Utilizinganewstrip-layoutvertical structure,theserevolutionarydevicesfeature extremelylowon-resistanceandsuperior switchingperforma

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

36NM60N

Automotive-gradeN-channel600V,0.093Ω,29A,MDmesh?IIPowerMOSFETinaD2PAKpackage

Features ?Designedforautomotiveapplicationsand AEC-Q101qualified ?100avalanchetested ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance Applications ?Switchingapplications Description ThisdeviceisanN-channelPowerMOSFET developedusingthesecondgene

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

STB36NM60N

Automotive-gradeN-channel600V,0.097typ.,29AFDmeshII

Description TheseFDmesh?IIPowerMOSFETswith intrinsicfast-recoverybodydiodeareproduced usingthesecondgenerationofMDmesh? technology.Utilizinganewstrip-layoutvertical structure,theserevolutionarydevicesfeature extremelylowon-resistanceandsuperior switchingperforma

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

STB36NM60N

Automotive-gradeN-channel600V,0.093Ω,29A,MDmesh?IIPowerMOSFETinaD2PAKpackage

Features ?Designedforautomotiveapplicationsand AEC-Q101qualified ?100avalanchetested ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance Applications ?Switchingapplications Description ThisdeviceisanN-channelPowerMOSFET developedusingthesecondgene

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

STB36NM60ND

Automotive-gradeN-channel600V,0.097typ.,29AFDmeshII

Description TheseFDmesh?IIPowerMOSFETswith intrinsicfast-recoverybodydiodeareproduced usingthesecondgenerationofMDmesh? technology.Utilizinganewstrip-layoutvertical structure,theserevolutionarydevicesfeature extremelylowon-resistanceandsuperior switchingperforma

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

詳細參數

  • 型號：

    STW36NM60N

  • 功能描述：

    MOSFET N-Ch 600V 0.092 Ohm 29A MDmesh II

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
ST/意法
23+
TO-247
10000
公司只做原裝正品
 詢價
22+
NA
3000
加我QQ或微信咨詢更多詳細信息,
 詢價
ST
22+
TO2473
9000
原廠渠道,現貨配單
 詢價
ST/意法
22+
N
30000
十七年VIP會員,誠信經營，一手貨源，原裝正品可零售！
 詢價
STMicroelectronics
2022+
TO-247-3
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
ST/意法
22+
N
28000
原裝現貨只有原裝.假一罰十
 詢價
ST/意法
22+
N
28000
原裝現貨只有原裝.假一罰十
 詢價
ST/意法
22+
TO-247
99830
詢價
ST
24+
TO-247
35628
獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證
 詢價
STMicroelectronics
18+
NA
3000
進口原裝正品優(yōu)勢供應QQ3171516190
 詢價
更多STW36NM60N供應商 更新時間2024-11-15 14:30:00

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