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STF12N120

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.69Ω(Max)@VGS=10V DESCRIPTION ·Switchingapplications.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STF12N120K5

Ultra low gate charge

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IXFH12N120

HighVoltageHiPerFETPowerMOSFET

Features ?InternationalstandardpackageJEDECTO-247AD ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Fastswitchingtimes Applications ?Switch-modeandresonant-modepowersupplies ?Motorcontrols ?UninterruptiblePowerSupplies(UPS) ?DCchoppers Advan

IXYS

IXYS Corporation

IXFH12N120

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH12N120P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.35Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH12N120P

PolarPowerMOSFETHiPerFET

Polar?PowerMOSFETHiPerFET? N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ?Internationalstandardpackages ?Fastrecoverydiode ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomou

IXYS

IXYS Corporation

IXFV12N120P

PolarPowerMOSFETHiPerFET

Polar?PowerMOSFETHiPerFET? N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ?Internationalstandardpackages ?Fastrecoverydiode ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomou

IXYS

IXYS Corporation

IXFV12N120PS

PolarPowerMOSFETHiPerFET

Polar?PowerMOSFETHiPerFET? N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ?Internationalstandardpackages ?Fastrecoverydiode ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomou

IXYS

IXYS Corporation

IXTH12N120

PowerMOSFET,AvalancheRatedHighVoltage

Features ?InternationalstandardpackageJEDECTO-247AD ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Fastswitchingtimes Applications ?Switch-modeandresonant-modepowersupplies ?Motorcontrols ?UninterruptiblePowerSupplies(UPS) ?DCchoppers Advan

IXYS

IXYS Corporation

IXTH12N120

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=12A@TC=25℃ ·DrainSourceVoltage- :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

KGT12N120NDH

Highspeedswitching

KECKEC CORPORATION

KEC株式會社

KGT12N120NDH

Highspeedswitching

KECKEC CORPORATION

KEC株式會社

MGV12N120D

InsulatedGateBipolarTransistorwithAnti-ParallelDiode

ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltageblockingcapability.ShortcircuitratedIGBTsarespecificallysuitedforapplicationsrequiringaguaran

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MGW12N120

InsulatedGateBipolarTransistor

InsulatedGateBipolarTransistor ???????N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.ShortcircuitratedIGBT’sarespecificallysuitedforapplicat

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MGW12N120

InsulatedGateBipolarTransistor

ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.ShortcircuitratedIGBT’sarespecificallysuitedforapplicationsrequiringaguaranteedshortcircuitwithstandtimesuchasMotorControlDriv

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MGW12N120D

InsulatedGateBipolarTransistorwithAnti-ParallelDiode

InsulatedGateBipolarTransistorwithAnti-ParallelDiode ???????N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltag

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MGW12N120D

InsulatedGateBipolarTransistorwithAnti-ParallelDiode

ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.ShortcircuitratedIGBT’sarespecificallysuitedforapplicationsrequiringaguara

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

STFW12N120

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.69Ω(Max)@VGS=10V DESCRIPTION ·Switchingapplications.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
ST
1516+
TO-220FP
10000
原裝正品
 詢價
ST
2021+
SMD
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
ST
21+
TO220F
90
原裝現(xiàn)貨假一賠十
 詢價
STM
1809+
TO-220
326
就找我吧!--邀您體驗愉快問購元件!
 詢價
ST
21+
TO220F
1568
10年芯程,只做原裝正品現(xiàn)貨,歡迎加微信垂詢!
 詢價
ST/意法半導(dǎo)體
21+
TO-220-3
8800
公司只做原裝正品
 詢價
ST(意法)
23+
NA
20094
正納10年以上分銷經(jīng)驗原裝進(jìn)口正品做服務(wù)做口碑有支持
 詢價
22+
NA
3000
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價
ST
23+
TO220F
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
ST/意法
23+
TO220F
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
更多STF12N120供應(yīng)商 更新時間2024-12-24 15:00:00

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