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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
STFU18N60M2	文件：513.5 Kbytes Page：12 Pages	N-channel 600 V, 0.255 typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?100avalanchetested ?Zener-protected Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmeshM2 technology.Thankstoitsstriplayoutandanimprovedverticalstructure,thedevice	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STFU18N60M2	文件：100 bytes Page：1 Pages	包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶類別：分立半導(dǎo)體產(chǎn)品晶體管 - FET，MOSFET - 單個(gè) 描述：MOSFET N-CH 600V TO-220FP	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
18N60M2	文件：513.5 Kbytes Page：12 Pages	N-channel600V,0.255typ.,13AMDmeshM2PowerMOSFETinaTO-220FPultranarrowleadspackage Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?100avalanchetested ?Zener-protected Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmeshM2 technology.Thankstoitsstriplayoutandanimprovedverticalstructure,thedevice	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STB18N60M2	文件：369.77 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=13A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.28Ω(Max)@VGS=10V APPLICATIONS ·Switching ·LLCconverters,resonantconverters	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
STB18N60M2	文件：1.21822 Mbytes Page：21 Pages	Lowgateinputresistance Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STB18N60M2	文件：861.3 Kbytes Page：27 Pages	N-channel600V,0.255Ωtyp.,13AMDmeshM2PowerMOSFETsinD2PAK,I2PAK,TO-220andTO-247packages Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?100avalanchetested ?Zener-protected Application ?Switchingapplications ?LLCconverters,resonantconverters Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingtheMDmesh?M2	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STF18N60M2	文件：188.84 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor ?FEATURES ?WithTO-220Fpackaging ?Highspeedswitching ?Lowgateinputresistance ?Standardlevelgatedrive ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Powersupply ?Switchingapplicati	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
STF18N60M2	文件：1.07185 Mbytes Page：13 Pages	Lowgateinputresistance Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmeshM2technology.Thankstoitsstriplayoutandanimprovedverticalstructure,thedeviceexhibitslowon-resistanceandoptimizedswitchingcharacteristics,renderingitsuitableforthemostdemandinghighefficiencycon	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STFH18N60M2	文件：692.95 Kbytes Page：12 Pages	Extremelylowgatecharge	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STI18N60M2	文件：861.3 Kbytes Page：27 Pages	N-channel600V,0.255Ωtyp.,13AMDmeshM2PowerMOSFETsinD2PAK,I2PAK,TO-220andTO-247packages Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?100avalanchetested ?Zener-protected Application ?Switchingapplications ?LLCconverters,resonantconverters Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingtheMDmesh?M2	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STL18N60M2	文件：946.02 Kbytes Page：16 Pages	N-channel600V,0.278廓typ.,9AMDmeshIIPlus??lowQgPowerMOSFETinaPowerFLAT??5x6HVpackage Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmesh?M2technology.Thankstoitsstriplayoutandanimprovedverticalstructure,thedeviceexhibitslowon-resistanceandoptimizedswitchingcharacteristics,renderingitsuitableforthemostdemandinghighefficiencyco	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STP18N60M2	文件：861.3 Kbytes Page：27 Pages	N-channel600V,0.255Ωtyp.,13AMDmeshM2PowerMOSFETsinD2PAK,I2PAK,TO-220andTO-247packages Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?100avalanchetested ?Zener-protected Application ?Switchingapplications ?LLCconverters,resonantconverters Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingtheMDmesh?M2	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STP18N60M2	文件：1.21822 Mbytes Page：21 Pages	Lowgateinputresistance Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STW18N60M2	文件：861.3 Kbytes Page：27 Pages	N-channel600V,0.255Ωtyp.,13AMDmeshM2PowerMOSFETsinD2PAK,I2PAK,TO-220andTO-247packages Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?100avalanchetested ?Zener-protected Application ?Switchingapplications ?LLCconverters,resonantconverters Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingtheMDmesh?M2	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STW18N60M2	文件：1.21822 Mbytes Page：21 Pages	Lowgateinputresistance Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS

產(chǎn)品屬性

產(chǎn)品編號(hào)：
STFU18N60M2
制造商：
STMicroelectronics
類別：
分立半導(dǎo)體產(chǎn)品 > 晶體管 - FET，MOSFET - 單個(gè)
包裝：
卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶
描述：
MOSFET N-CH 600V TO-220FP

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市科雨電子有限公司	STFU18N60M2	STM	1809+	SMD	1675	就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!	詢價(jià)
深圳市易訊博科技有限公司	STFU18N60M2		22+	NA	3000	加我QQ或微信咨詢更多詳細(xì)信息,	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	STFU18N60M2	ST/意法	23+	TO-220F	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳市河鋒鑫科技有限公司	STFU18N60M2	ST	22+		9000	原廠渠道,現(xiàn)貨配單	詢價(jià)
深圳廊盛科技有限公司	STFU18N60M2	ST/意法	2022	TO-220F	80000	原裝現(xiàn)貨,OEM渠道,歡迎咨詢	詢價(jià)
深圳市鵬順微電子科技有限公司	STFU18N60M2	STMicroelectronics	2022+	-	38550	全新原裝支持表配單中國(guó)著名電子元器件獨(dú)立分銷	詢價(jià)
中科航電（深圳）電子集團(tuán)有限公司	STFU18N60M2	ST		原廠原封	93480	集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)	詢價(jià)
深圳市得捷芯城科技有限公司	STFU18N60M2	ST/意法	23+	NA/	915	優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票	詢價(jià)
深圳市創(chuàng)新跡電子有限公司	STFU18N60M2	ST/意法	22+	TO-220F	20000	原裝現(xiàn)貨,實(shí)單支持	詢價(jià)
深圳市朱博士電子科技有限公司	STFU18N60M2	ST	2405+	原廠封裝	50000	15年芯片行業(yè)經(jīng)驗(yàn)/只供原裝正品:0755-83268793鄒小姐	詢價(jià)

更多STFU18N60M2供應(yīng)商更新時(shí)間2021-9-14 10:50:00

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