首頁 >STG>規(guī)格書列表

零件編號下載 訂購功能描述/絲印制造商 上傳企業(yè)LOGO

STGIPQ3H60T-HLS

SLLIMM-nano, 2nd series IPM, 3 A, 600 V, 3-phase inverter bridge IGBT

Features ?IPM3A,600V,3-phaseIGBTinverterbridgeincluding3controlICsforgate drivingandfreewheelingdiodes ?3.3V,5V,15VTTL/CMOSinputcomparatorswithhysteresisandpull-down/ pull-upresistors ?Internalbootstrapdiode ?Optimizedforlowelectromagneticinterference

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STGIPQ3H60T-HZS

SLLIMM-nano, 2nd series IPM, 3 A, 600 V, 3-phase inverter bridge IGBT

Features ?IPM3A,600V,3-phaseIGBTinverterbridgeincluding3controlICsforgate drivingandfreewheelingdiodes ?3.3V,5V,15VTTL/CMOSinputcomparatorswithhysteresisandpull-down/ pull-upresistors ?Internalbootstrapdiode ?Optimizedforlowelectromagneticinterference

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STGIPQ4C60T-HL

SLLIMM nano - 2nd series IPM, 3-phase inverter, 6 A, 600 V short?circuit rugged IGBT

Features ?IPM6A,600V,3-phaseIGBTinverterbridgeincluding3controlICsforgate drivingandfreewheelingdiodes ?3.3V,5V,15VTTL/CMOSinputcomparatorswithhysteresisandpull-down/ pull-upresistors ?Internalbootstrapdiode ?Optimizedforlowelectromagneticinterference

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STGIPQ5C60T-HLS

SLLIMMTM nano - 2nd series IPM, 3-phase inverter, 5 A, 600 V, short?circuit rugged IGBTs

Features ?IPM5A,600V,3-phaseIGBTinverterbridgeincluding3controlICsforgate drivingandfreewheelingdiodes ?3.3V,5V,15VTTL/CMOSinputcomparatorswithhysteresisandpull-down/ pull-upresistors ?Internalbootstrapdiode ?Optimizedforlowelectromagneticinterference

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STGIPQ5C60T-HZS

SLLIMMTM nano - 2nd series IPM, 3-phase inverter, 5 A, 600 V, short?circuit rugged IGBTs

Features ?IPM5A,600V,3-phaseIGBTinverterbridgeincluding3controlICsforgate drivingandfreewheelingdiodes ?3.3V,5V,15VTTL/CMOSinputcomparatorswithhysteresisandpull-down/ pull-upresistors ?Internalbootstrapdiode ?Optimizedforlowelectromagneticinterference

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STGIPS14K60T

Marking:GIPS14K60T;Package:SDIP-25L;SLLIMM (small low-loss intelligent molded module) IPM

Features ?IPM14A,600V3-phaseIGBTinverterbridge includingcontrolICsforgatedrivingandfreewheelingdiodes ?Short-circuitruggedIGBTs ?VCE(sat)negativetemperaturecoefficient ?3.3V,5V,15VCMOS/TTLinputs comparatorswithhysteresisandpulldown/ pullupresistors ?

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STGO30H60DLLFBAG

Automotive-grade trench gate field-stop, 600 V, 30 A, high-speed HB series IGBT in a TO?LL package

Features ?AEC-Q101qualified ?Maximumjunctiontemperature:TJ=175°C ?Logiclevelgatedrive ?High-speedswitchingseries ?Minimizedtailcurrent ?VCE(sat)=1.6V(typ.)@IC=30A ?LowVFsoft-recoveryco-packageddiode ?Tightparameterdistribution ?Saferparalleling ?Lo

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STGP10H60DF

Marking:GP10H60DF;Package:TO-220;Trench gate field-stop IGBT, H series 600 V, 10 A high speed

Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThisIGBTseriesofferstheoptimum compromisebetweenconductionandswitching losses,maximizingtheefficiencyofveryhigh frequencyconverters.Furthermore,apositive VCE(s

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STGP10HF60KD

Marking:GP10HF60KD;Package:TO-220;10 A - 600 V - short-circuit rugged IGBT

Features ■Lowon-voltagedrop(VCE(sat)) ■Operatingjunctiontemperatureupto175°C ■LowCres/Ciesratio(nocrossconduction susceptibility) ■Tightparameterdistribution ■Ultrafastsoft-recoveryantiparalleldiode ■Short-circuitrugged Applications ■Motordrives ■Highfre

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STGP10HF60KD

Marking:GP10HF60KD;Package:TO-220;10 A - 600 V - short-circuit rugged IGBT

Features ■Lowon-voltagedrop(VCE(sat)) ■Operatingjunctiontemperatureupto175°C ■LowCres/Ciesratio(nocrossconduction susceptibility) ■Tightparameterdistribution ■Ultrafastsoft-recoveryantiparalleldiode ■Short-circuitrugged Applications ■Motordrives ■Highfre

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

產品屬性

  • 產品編號:

    STGW45HF60WDI

  • 制造商:

    STMicroelectronics

  • 類別:

    分立半導體產品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝:

    管件

  • 不同?Vge、Ic 時?Vce(on)(最大值):

    2.5V @ 15V,30A

  • 開關能量:

    330μJ(關)

  • 輸入類型:

    標準

  • 25°C 時 Td(開/關)值:

    -/145ns

  • 測試條件:

    400V,30A,4.7 歐姆,15V

  • 工作溫度:

    -55°C ~ 150°C(TJ)

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-247-3

  • 供應商器件封裝:

    TO-247 長引線

  • 描述:

    IGBT 600V 70A 250W TO247

供應商型號品牌批號封裝庫存備注價格
ST
2019
TO-247
19700
INFINEON品牌專業(yè)原裝優(yōu)質
詢價
ST/意法
17+
TO-247TO-247longlead
31518
原裝正品 可含稅交易
詢價
ST
25+23+
TO-247
24424
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨
詢價
ST
1926+
TO-247TO-247
6852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
詢價
STM原廠目錄
24+
TO-247
28500
授權代理直銷,原廠原裝現(xiàn)貨,假一罰十,特價銷售
詢價
ST
2447
TO-247
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
詢價
STM
1809+
TO247-3
1675
就找我吧!--邀您體驗愉快問購元件!
詢價
22+
NA
207
加我QQ或微信咨詢更多詳細信息,
詢價
ST
22+
TO-247
12245
現(xiàn)貨,原廠原裝假一罰十!
詢價
ST/意法
23+
TO-247
10880
原裝正品,支持實單
詢價
更多STG供應商 更新時間2025-4-23 11:20:00