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STH80N10F7-2

Ultra low on-resistance

Description Thesedevicesutilizethe7thgenerationofdesignrulesofST’sproprietarySTripFET?technology,withanewgatestructure.TheresultingPowerMOSFETexhibitsthelowestRDS(on)inallpackages. ?Extremelylowgatecharge ?Ultralowon-resistance ?Lowgateinputresistance A

STMICROELECTRONICSSTMicroelectronics

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STH80N10LF7-2AG

Marking：80N10LF7；Package：H2PAK-2；Automotive-grade N-channel 100 V, 7 mΩ typ., 80 A, STripFET? F7 Power MOSFET in an H2PAK-2 package

Features ?AEC-Q101qualified ?AmongthelowestRDS(on)onthemarket ?ExcellentFoM(figureofmerit) ?LowCrss/CissratioforEMIimmunity ?Highavalancheruggedness Applications ?Switchingapplications Description ThisN-channelPowerMOSFETutilizesSTripFET?F7technologywi

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STH85N15F4-2

Marking：85N15F4；Package：H2PAK；N-channel 150 V, 0.015 Ω, 85 A TO-220, H2PAK STripFET? DeepGATE? Power MOSFET

Features ■Extremelylowon-resistanceRDS(on) ■100avalanchetested Application ■Switchingapplications Description ThisSTripFET?DeepGATE?PowerMOSFET technologyisamongthelatestimprovements, whichhavebeenespeciallytailoredtominimize on-stateresistance,withanewgat

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STH8N80

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

STMICROELECTRONICSSTMicroelectronics

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STH8N80FI

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

STMICROELECTRONICSSTMicroelectronics

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STH8NA60

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.92? ■±30VGATETOSOURCEVOLTAGERATING ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWINTRINSICCAPACITANCES ■GATECHARGEMINIMIZED ■REDUCEDTHRESHOLDVOLTAGESPREAD APPLICATIONS ■HIGHC

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STH8NA60FI

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.92? ■±30VGATETOSOURCEVOLTAGERATING ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWINTRINSICCAPACITANCES ■GATECHARGEMINIMIZED ■REDUCEDTHRESHOLDVOLTAGESPREAD APPLICATIONS ■HIGHC

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STH8NA60FI

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STH8NA80

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS(

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STH8NA80FI

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS(

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供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ST/意法半導(dǎo)體
22+
H2PAK-2
6004
原裝正品現(xiàn)貨 可開(kāi)增值稅發(fā)票
 詢價(jià)
ST
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
 詢價(jià)
STMicroelectronics
24+
NA
3000
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
 詢價(jià)
STMicroelectronics
21+
H2Pak-2
1000
100%進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng))!
 詢價(jià)
ST(意法半導(dǎo)體)
2447
H2PAK-2
105000
1000個(gè)/圓盤一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,
 詢價(jià)
STM
1809+
TO263-2
1675
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
 詢價(jià)
ST
21+
TO-263
1200
只做原裝,絕對(duì)現(xiàn)貨,原廠代理商渠道,歡迎電話微信查
 詢價(jià)
NA
23+
NA
26094
10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品,做服務(wù)型企業(yè)
 詢價(jià)
ST
21+
TO-263
10000
全新原裝 公司現(xiàn)貨 價(jià)格優(yōu)
 詢價(jià)
22+
NA
3000
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更多STH8供應(yīng)商 更新時(shí)間2025-4-21 8:31:00

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