STGB10HF60KDT4中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

Features

■ Low on-voltage drop (VCE(sat))

■ Operating junction temperature up to 175 °C

■ Low Cres / Cies ratio (no cross conduction

susceptibility)

■ Tight parameter distribution

■ Ultrafast soft-recovery antiparallel diode

■ Short-circuit rugged

Applications

■ Motor drives

■ High frequency inverters

■ SMPS and PFC in both hard switch and

resonant topologies

Description

This device utilizes the advanced PowerMESH?

process for the IGBT and the Turbo 2 Ultrafast

high voltage technology for the diode. The

combination results in a very good trade-off

between conduction losses and switching

behavior rendering the product ideal for diverse

high voltage applications operating at high

frequencies.