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50N60

IGBT-FieldStopII

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

50N60

PowerMOSFET

IXYS

IXYS Corporation

50N60

Polar3HiperFETPowerMOSFET

IXYS

IXYS Corporation

50N60G-TND-T

50Amps,60VoltsN-CHANNELPOWERMOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

50N60L-TND-T

50Amps,60VoltsN-CHANNELPOWERMOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

AIKW50N60CT

LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnologywithsoft,fastrecoveryantiparallelEmitterControlleddiode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

DAM50N60C

N-ChannelEnhancementModeMOSFET

DACO

DACO SEMICONDUCTOR CO.,LTD.

DAM50N60G

N-ChannelEnhancementModeMOSFET

DACO

DACO SEMICONDUCTOR CO.,LTD.

DTGN50N60

Extremelyenhancedavalanchecapability

GeneralDescription Din-TekFieldStopTrenchIGBTsofferlowswitchinglosses,highenergy efficiencyandshortcircuitruggedness. Itisdesignedforapplicationssuchasmotorcontrol,uninterruptedpower supplies(UPS),generalinverters. FEATURES ·Highspeedswitching ·Highruggedness,

DINTEK

DinTek Semiconductor Co,.Ltd

FGA50N60LS

IGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGW50N60H

DiscreteIGBT(High-SpeedVseries)600V/50A

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

FGW50N60HD

DiscreteIGBT(High-SpeedVseries)600V/50A

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

FGW50N60VD

DiscreteIGBT(High-SpeedVseries)600V/50A

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

G50N60F

InsulatedGateBipolarTransistor(IGBT)

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

G50N60HS

HighSpeedIGBTinNPT-technology30lowerEoffcomparedtopreviousgeneration

HighSpeedIGBTinNPT-technology ?30lowerEoffcomparedtopreviousgeneration ?Shortcircuitwithstandtime–10μs ?Designedforoperationabove30kHz ?NPT-Technologyfor600Vapplicationsoffers: -parallelswitchingcapability -moderateEoffincreasewithtemperature -verytigh

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IGB50N60T

LowLossIGBT:IGBTinTRENCHSTOP??andFieldstoptechnology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IGB50N60T

LowLossIGBTinTrenchStoptechnology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IGB50N60T

LOWLOSSIGBTINTRENCHANDFIELDSTOPTECHNOLOGY

LowLossIGBTinTrenchandFieldstoptechnology ?VerylowVCE(sat)1.5V(typ.) ?MaximumJunctionTemperature175°C ?Shortcircuitwithstandtime–5μs ?Designedfor: -FrequencyConverters -UninterruptedPowerSupply ?TrenchandFieldstoptechnologyfor600Vapplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IGP50N60T

LOWLOSSIGBTINTRENCHANDFIELDSTOPTECHNOLOGY

LowLossIGBTinTrenchandFieldstoptechnology ?VerylowVCE(sat)1.5V(typ.) ?MaximumJunctionTemperature175°C ?Shortcircuitwithstandtime–5μs ?Designedfor: -FrequencyConverters -UninterruptedPowerSupply ?TrenchandFieldstoptechnologyfor600Vapplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IGP50N60T

LowLossIGBTinTrenchStopandFieldstoptechnology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

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8513
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ST
2023+
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80000
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24+
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2050
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ST
24+
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28500
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23+
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11200
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93480
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STMicroelectronics
23+
IGBTN-CHAN600V50AISOTOP
1690
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22+23+
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34063
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2021+
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100500
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模塊
256
原裝 原裝 原裝 只做原裝現(xiàn)貨
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更多STGE50N60D供應(yīng)商 更新時(shí)間2025-1-13 20:17:00