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STGP6NC60HD

N-channel 600V - 7A - D2PAK / TO-220 / TO-220FP Very fast PowerMESH TM IGBT

STMICROELECTRONICSSTMicroelectronics

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STGP6NC60HD

N-channel 600V - 7A - I2PAK / D2PAK / TO-220 / TO-220FP Very fast PowerMESH??IGBT

STMICROELECTRONICSSTMicroelectronics

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STGP6NC60HD

包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 封裝/外殼:TO-220-3 類別:分立半導體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 600V 15A 56W TO220

STMICROELECTRONICSSTMicroelectronics

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GB6NC60H

N-channel600V-7A-D2PAKVeryfastPowerMESHTMIGBT

STMICROELECTRONICSSTMicroelectronics

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GB6NC60HD

N-channel600V-7A-D2PAK/TO-220/TO-220FPVeryfastPowerMESHTMIGBT

STMICROELECTRONICSSTMicroelectronics

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GD6NC60H

N-channel600V-7A-DPAKVeryfastPowerMESHTMIGBT

STMICROELECTRONICSSTMicroelectronics

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GD6NC60HD

N-channel600V-7A-DPAKVeryfastPowerMESHTMIGBT

STMICROELECTRONICSSTMicroelectronics

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GF6NC60HD

N-channel600V-7A-D2PAK/TO-220/TO-220FPVeryfastPowerMESHTMIGBT

STMICROELECTRONICSSTMicroelectronics

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GP6NC60HD

N-channel600V-7A-D2PAK/TO-220/TO-220FPVeryfastPowerMESHTMIGBT

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

P6NC60

N-CHANNEL600V-1ohm-6ATO-220/TO-220FP/I2PAKPowerMESH??IMOSFET

DESCRIPTION ThePowerMESH?IIistheevolutionofthefirstgenerationofMESHOVERLAY?.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=1.

STMICROELECTRONICSSTMicroelectronics

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P6NC60FP

N-CHANNEL600V-1ohm-6ATO-220/TO-220FP/I2PAKPowerMESH??IMOSFET

DESCRIPTION ThePowerMESH?IIistheevolutionofthefirstgenerationofMESHOVERLAY?.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=1.

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STB6NC60

N-CHANNEL600V-1ohm-6ATO-220/TO-220FP/I2PAKPowerMESH??IMOSFET

DESCRIPTION ThePowerMESH?IIistheevolutionofthefirstgenerationofMESHOVERLAY?.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=1.

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STGB6NC60H

N-channel600V-7A-D2PAKVeryfastPowerMESHTMIGBT

STMICROELECTRONICSSTMicroelectronics

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STGB6NC60HD

N-channel600V-7A-D2PAK/TO-220/TO-220FPVeryfastPowerMESHTMIGBT

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STGB6NC60HD

N-channel600V-7A-I2PAK/D2PAK/TO-220/TO-220FPVeryfastPowerMESH??IGBT

STMICROELECTRONICSSTMicroelectronics

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STGBL6NC60D

N-channel600V-6A-DPAK/D2PAK/TO-220/TO-220FPHyperfastIGBT

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STGBL6NC60D

600V-6AhyperfastIGBT

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STGBL6NC60DI

6A,600VhyperfastIGBT

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STGD6NC60H

N-channel600V-7A-DPAKVeryfastPowerMESHTMIGBT

STMICROELECTRONICSSTMicroelectronics

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STGD6NC60HD

N-channel600V-7A-DPAKVeryfastPowerMESHTMIGBT

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產(chǎn)品屬性

  • 產(chǎn)品編號:

    STGP6NC60HD

  • 制造商:

    STMicroelectronics

  • 類別:

    分立半導體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 系列:

    PowerMESH?

  • 包裝:

    卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶

  • 不同?Vge、Ic 時?Vce(on)(最大值):

    2.5V @ 15V,3A

  • 開關能量:

    20μJ(開),68μJ(關)

  • 輸入類型:

    標準

  • 25°C 時 Td(開/關)值:

    12ns/76ns

  • 測試條件:

    390V,3A,10 歐姆,15V

  • 工作溫度:

    -55°C ~ 150°C(TJ)

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-220-3

  • 供應商器件封裝:

    TO-220

  • 描述:

    IGBT 600V 15A 56W TO220

供應商型號品牌批號封裝庫存備注價格
ST
19+
TO-220
15000
詢價
ST/意法
24+
NA
860000
明嘉萊只做原裝正品現(xiàn)貨
詢價
ST(意法半導體)
23+
TO-220
942
原廠訂貨渠道,支持BOM配單一站式服務
詢價
STMicroelectronics
24+
TO-220-3
30000
晶體管-分立半導體產(chǎn)品-原裝正品
詢價
ST
23+
TO220
6996
只做原裝正品現(xiàn)貨
詢價
ST(意法半導體)
23+
TO-220
10000
只做原裝現(xiàn)貨 假一賠萬
詢價
ST/意法半導體
22+
TO-220-3
6000
原裝正品現(xiàn)貨 可開增值稅發(fā)票
詢價
ST
新批次
TO-220
3000
詢價
ST
24+
TO-220-3
1565
詢價
ST
23+
TO220
8820
全新原裝優(yōu)勢
詢價
更多STGP6NC60HD供應商 更新時間2024-12-25 10:20:00