STGWA30H65DFB2中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

Features

? Maximum junction temperature : TJ = 175 °C

? Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A

? Very fast and soft recovery co-packaged diode

? Minimized tail current

? Tight parameter distribution

? Low thermal resistance

? Positive VCE(sat) temperature coefficient

Applications

? Welding

? Power factor correction

? UPS

? Solar inverters

? Chargers

Description

The newest IGBT 650 V HB2 series represents an evolution of the advanced

proprietary trench gate field-stop structure. The performance of the HB2 series is

optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current

values, as well as in terms of reduced switching energy. A very fast soft recovery

diode is co-packaged in antiparallel with the IGBT. The result is a product specifically

designed to maximize efficiency for a wide range of fast applications.