| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
STH | High Industrial Performance (HIPak) Solid-State Relays | TELEDYNE Teledyne Technologies Incorporated | TELEDYNE | |
D-Band Spectrum Analyzer Harmonic Mixer, Common LO/IF Port Description: ModelSTH-06SF-S1isaDBandharmonicmixeremployingsinglediodeandbroadbandcircuitrytodeliverlowconversionlossandcontinuousfrequencycoverageforfullwaveguidebandoperationscoveringthefrequencyrangeof110to170GHz.Themixerextendstheoperationfrequencyof | ERAVANT Eravant | ERAVANT | ||
F-Band Spectrum Analyzer Harmonic Mixer, Common LO/IF Port Description: ModelSTH-08SF-S1isaFBandharmonicmixeremployingsinglediodeandbroadbandcircuitrytodeliverlowconversionlossandcontinuousfrequencycoverageforfullwaveguidebandoperationscoveringthefrequencyrangeof90to140GHz.Themixerextendstheoperationfrequencyof | ERAVANT Eravant | ERAVANT | ||
NPN Plastic Power Transistor NPNPlasticPowerTransistor Lowfrequencypoweramplifier | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半導體先之科半導體科技（東莞）有限公司 | SEMTECH_ELEC | ||
HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS (IGBT) ?HIGHINPUTIMPEDANCE ?LOWON-VOLTAGE ?HIGHCURRENTCAPABILITY APPLICATIONS: ?AUTOMOTIVEIGNITION ?DRIVERSFORSOLENOIDSANDRELAYS N-channelHighInjectionPOWERMOStransis- tors(IGBT)whichfeaturesahighimpedancein- sulatedgateinputandalowon-resistance characteristi | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
Automotive-grade N-channel 800 V, 0.60 Ω typ., 8 A MDmesh K5 Power MOSFET in an H2PAK-2 package Features ?AEC-Q101qualified ?Industry’slowestRDS(on)xarea ?Industry’sbestFoM(figureofmerit) ?Ultra-lowgatecharge ?100avalanchetested Applications ?Switchingapplications Description ThisveryhighvoltageN-channelPowerMOSFETisdesignedusingMDmeshK5 technolo | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS( | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=9.6A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS( | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=5.6A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh??I MOSFET DESCRIPTION ThePowerMESH?IIistheevolutionofthefirstgenerationofMESHOVERLAY?.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=0. | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh??I MOSFET DESCRIPTION ThePowerMESH?IIistheevolutionofthefirstgenerationofMESHOVERLAY?.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=0. | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.75Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-channel 68 V, 0.0053 Ω typ.,110 A, STripFET? F6 Power MOSFET in a H2PAK-2 package Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness ?Lowgatedrivepowerloss Applications ?Switchingapplications Description ThisdeviceisanN-channelPowerMOSFET developedusingtheSTripFET?F6technology withanewtrenchgatestructure.Th | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
Automotive-grade N-channel 1200 V, 1.45 Ω typ., 7 A, MDmesh K5 Power MOSFET in an H2PAK?2 package Features ?AEC-Q101qualified ?Industry’slowestRDS(on)xarea ?Industry’sbestFoM(figureofmerit) ?Ultra-lowgatecharge ?100avalanchetested Applications ?Switchingapplications Description ThisveryhighvoltageN-channelPowerMOSFETisdesignedusingMDmesh K5technolo | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
fast power mos transistor DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS( | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS( | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
fast power mos transistor DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS( | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS( | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS |
詳細參數
- 型號：
STH
- 制造商：
Panduit Corp
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
SWITCH |
20+ |
輕觸開關 |
28522 |
只做原裝正品現貨,或訂貨假一賠十! |
詢價 | ||
STMicroelectronics |
21+ |
H2PAK-6 |
1000 |
進口原裝!長期供應!絕對優(yōu)勢價格(誠信經營)!! |
詢價 | ||
ST |
22+ |
TO-263 |
6000 |
原廠原裝,價格優(yōu)勢!13246658303 |
詢價 | ||
STMicr |
21+ |
25000 |
原廠原包 深圳現貨 主打品牌 假一賠百 可開票! |
詢價 | |||
ST |
22+ |
TO-247 |
66900 |
原廠原裝現貨 |
詢價 | ||
ST/意法半導體 |
21+ |
48-QFN |
13880 |
公司只售原裝,支持實單 |
詢價 | ||
ST/意法半導體 |
2023+ |
48-QFN |
原裝正品現貨、支持第三方檢驗、終端BOM表可配單提供 |
詢價 | |||
Shineon |
23+ |
SMD |
3500 |
全新原裝正品現貨,支持訂貨 |
詢價 | ||
ST/意法 |
2122+ |
TO-263 |
35000 |
全新原裝正品,優(yōu)勢渠道可含稅,假一賠十 |
詢價 | ||
ST/意法 |
22 |
TO-263 |
15000 |
3月31原裝,微信報價 |
詢價 |
相關規(guī)格書
更多- STH110N10F7-2
- STH12N120K5-2
- STH130N10F3-2
- STH150N10F7-2
- STH180N10F3-6
- STH185N10F3-6
- STH2
- STH-22
- STH240N10F7-6
- STH240N75F3-6
- STH24D25
- STH250N6F3-6
- STH260N6F6-6
- STH270N4F3-2
- STH270N8F7-2
- STH275N8F7-6AG
- STH310N10F7-2
- STH315N10F7-2
- STH320N4F6-2
- STH360N4F6-2
- STH8
- STHDLS101QTR
- STHDMI001ATTR
- STHV800L
- STI
- STI10NM60N
- STI13005-1
- STI14NM50N
- STI16N65M5
- STI18N65M5
- STI21N65M5
- STI24N60M2
- STI260N6F6
- STI270N4F3
- STI30N65M5
- STI33N60M2
- STI35N65M5
- STI400N4F6
- STI42N65M5
- STI4N62K3
- STI57N65M5
- STI6N62K3
- STI76NF75
- STICE-SYS001
- STIEC45-27AS
相關庫存
更多- STH110N10F7-6
- STH12N120K5-2/BKN
- STH140N8F7-2
- STH180N10F3-2
- STH185N10F3-2
- STH-19
- STH210N75F6-2
- STH240N10F7-2
- STH240N75F3-2
- STH24D12
- STH250N55F3-6
- STH260N6F6-2
- STH265N6F6-2AG
- STH270N4F3-6
- STH270N8F7-6
- STH300NH02L-6
- STH310N10F7-6
- STH315N10F7-6
- STH320N4F6-6
- STH3N150-2
- STH80N10F7-2
- STHDLS101TQTR
- STHV748QTR
- STHVDAC-253MF3
- STI10N62K3
- STI12N65M5
- STI13NM60N
- STI150N10F7
- STI18N65M2
- STI20N65M5
- STI22NM60N
- STI24NM60N
- STI26NM60N
- STI300N4F6
- STI32N65M5
- STI34N65M5
- STI360N4F6
- STI40N65M2
- STI45N10F7
- STI55NF03L
- STI5N52U
- STI6N80K5
- STI8N65M5
- STIEC45-24AS
- STIEC45-28AS
