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D30NF06L

N-CHANNEL60V-0.022ohm-35ADPAK/IPAKSTripFET??POWERMOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSTMicroelectronicsunique“SingleFeatureSize?”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemar

STMICROELECTRONICSSTMicroelectronics

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STD30NF06

N-CHANNEL60V-0.020ohm-28AIPAK/DPAKSTripFET??IIPOWERMOSFET

DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize?stripbasedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarkab

STMICROELECTRONICSSTMicroelectronics

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STD30NF06

60VN-ChannelEnhancementModePowerMOSFET

GeneralDescription TheSTD30NF06usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge. Itcanbeusedinawidevarietyofapplications. Features VDS=60V,ID=30A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnolo

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

STD30NF06

60VN-ChannelEnhancementModePowerMOSFET

GeneralDescription TheSTD30NF06usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge. Itcanbeusedinawidevarietyofapplications. Features VDS=60V,ID=30A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnology

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

STD30NF06L

60VN-ChannelEnhancementModePowerMOSFET

GeneralDescription TheSTD30NF06usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge. Itcanbeusedinawidevarietyofapplications. Features VDS=60V,ID=30A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnolo

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

STD30NF06L

60VN-ChannelEnhancementModePowerMOSFET

GeneralDescription TheSTD30NF06usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge. Itcanbeusedinawidevarietyofapplications. Features VDS=60V,ID=30A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnology

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

STD30NF06L

N-CHANNEL60V-0.022ohm-35ADPAK/IPAKSTripFET??POWERMOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSTMicroelectronicsunique“SingleFeatureSize?”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemar

STMICROELECTRONICSSTMicroelectronics

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STD30NF06LAG

Automotive-gradeN-channel60V,0.022Ωtyp.,35ASTripFET?IIPowerMOSFETinaDPAKpackage

Features ?AEC-Q101qualified ?Lowthresholddrive ?Gatechargeminimized Description ThisPowerMOSFETseriesrealizedwith STMicroelectronicsuniqueSTripFET?process isspecificallydesignedtominimizeinput capacitanceandgatecharge.Itisthereforeideal asaprimaryswitchin

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

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更多STP30NF06,P30NF06供應(yīng)商 更新時(shí)間2024-12-25 15:00:00