首頁(yè) >STP6NA60FI>規(guī)格書(shū)列表
零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
STP6NA60FI | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS( | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | |
N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS( | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS( | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
PowerMOStransistorsLowcapacitanceAvalancheenergyrated | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
PowerMOStransistorsLowcapacitanceAvalancheenergyrated | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR ■TYPICALRDS(on)=1? ■±30VGATETOSOURCEVOLTAGERATING ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWINTRINSICCAPACITANCES ■GATECHARGEMINIMIZED ■REDUCEDTHRESHOLDVOLTAGESPREAD ■THROUGH-HOLEI2PAK(TO- | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS( | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptmizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS(o | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS |
詳細(xì)參數(shù)
- 型號(hào):
STP6NA60FI
- 制造商:
Panasonic Industrial Company
- 功能描述:
TRANSISTOR SUBBING WITH 2SK1404
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ST |
24+ |
N/A |
2500 |
詢價(jià) | |||
ST/進(jìn)口原 |
17+ |
TO-220F |
6200 |
詢價(jià) | |||
ST |
24+ |
TO-220F |
12500 |
原裝現(xiàn)貨熱賣 |
詢價(jià) | ||
ST |
23+ |
TO-220F |
8795 |
詢價(jià) | |||
ST |
16+ |
TO-220 |
10000 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
ST |
2020+ |
TO-220 |
350000 |
100%進(jìn)口原裝正品公司現(xiàn)貨庫(kù)存 |
詢價(jià) | ||
ST |
23+ |
TO-220F |
10000 |
專做原裝正品,假一罰百! |
詢價(jià) | ||
ST全系列 |
22+23+ |
TO-220F |
26012 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
ST |
20+ |
TO-220F |
38900 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票 |
詢價(jià) | ||
ST |
24+ |
TO-220 |
6430 |
原裝現(xiàn)貨/歡迎來(lái)電咨詢 |
詢價(jià) |
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