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首頁 >SVS35N60PT>規(guī)格書列表

零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
35N60A	文件：851.66 Kbytes Page：5 Pages	35A600VN-channelenhancedfieldeffecttransistor	YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑風(fēng)微電子廣東佑風(fēng)微電子有限公司	YFWDIODE
DAM35N60F	文件：260.05 Kbytes Page：4 Pages	N-ChannelEnhancementModeMOSFET	DACO DACO SEMICONDUCTOR CO.,LTD.	DACO
DAM35N60H	文件：243.21 Kbytes Page：4 Pages	N-ChannelEnhancementModeMOSFET	DACO DACO SEMICONDUCTOR CO.,LTD.	DACO
FCA35N60	文件：347.93 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=35A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=79mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
FCA35N60	文件：770.04 Kbytes Page：8 Pages	600VN-ChannelMOSFET Description SuperFET?isFarichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Features ?650V@TJ=150°C ?Typ.RDS(on)=0.079? ?Ultralow	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FCA35N60	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FCH35N60	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FCH35N60	文件：436.01 Kbytes Page：8 Pages	N-ChannelSuperFET?MOSFET Description SuperFET?MOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thistechnologyistailoredtominimizeconductionloss,	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FGW35N60H	文件：635.16 Kbytes Page：6 Pages	DiscreteIGBT(High-SpeedVseries)600V/35A Features Lowpowerloss Lowswitchingsurgeandnoise Highreliability,highruggedness(RBSOA,SCSOAetc.) Applications Uninterruptiblepowersupply Powercoditionner Powerfactorcorrectioncircuit	FujiFuji Electric 富士電機(jī)富士電機(jī)株式會(huì)社	Fuji
FGW35N60HD	文件：640.08 Kbytes Page：8 Pages	DiscreteIGBT(High-SpeedVseries)600V/35A 600V/35A Features Lowpowerloss Lowswitchingsurgeandnoise Highreliability,highruggedness(RBSOA,SCSOAetc.) Applications Uninterruptiblepowersupply Powercoditionner Powerfactorcorrectioncircuit	FujiFuji Electric 富士電機(jī)富士電機(jī)株式會(huì)社	Fuji
ICE35N60W	文件：589.87 Kbytes Page：8 Pages	N-ChannelEnhancementModeMOSFET	ICEMOS Icemos Technology	ICEMOS
ICE35N60W	文件：964.41 Kbytes Page：4 Pages	N-ChannelEnhancementModeMOSFET	MICROSS Micross Components	MICROSS
ISPW35N60CFD	文件：335.61 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor ?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤118m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXDH35N60B	文件：101.3 Kbytes Page：4 Pages	IGBTwithoptionalDiode HighSpeed,LowSaturationVoltage Features ●NPTIGBTtechnology ●lowswitchinglosses ●lowtailcurrent ●nolatchup ●shortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●MOSinput,voltagecontrolled ●optionalultrafastdiode ●Internationalstandard	IXYS IXYS Corporation	IXYS
IXDP35N60B	文件：101.3 Kbytes Page：4 Pages	IGBTwithoptionalDiode HighSpeed,LowSaturationVoltage Features ●NPTIGBTtechnology ●lowswitchinglosses ●lowtailcurrent ●nolatchup ●shortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●MOSinput,voltagecontrolled ●optionalultrafastdiode ●Internationalstandard	IXYS IXYS Corporation	IXYS
SIHB35N60E	文件：162.62 Kbytes Page：7 Pages	ESeriesPowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
SIHB35N60E	文件：215.86 Kbytes Page：9 Pages	ESeriesPowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
SIHB35N60EF	文件：192.22 Kbytes Page：10 Pages	EFSeriesPowerMOSFETWithFastBodyDiode	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
SIHF35N60E	文件：151.17 Kbytes Page：7 Pages	ESeriesPowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
SIHF35N60E	文件：183.32 Kbytes Page：9 Pages	ESeriesPowerMOSFET FEATURES ?Aspecificonresistance(m?-cm2)reductionof 25 ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市凌旭科技有限公司	SVS35N60PT	士蘭微	21+	DO-201AD	12500		詢價(jià)
深圳市英瑞芯科技有限公司	SVS35N60PT		2022+	DO-201AD	8600	英瑞芯只做原裝正品	詢價(jià)
中科航電（深圳）電子集團(tuán)有限公司	SVS35N60PT	士蘭微		DO-201AD	90000	集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	SVS35NF60P7	SL	23+	TO247	11200	原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO	詢價(jià)
深圳市金芯世紀(jì)電子有限公司	SVS35NF60PN	SILAN/士蘭微	22+	TO-3P	100000	代理渠道/只做原裝/可含稅	詢價(jià)
深圳市明嘉萊科技有限公司	SVS35NF60PN	SILAN/士蘭微	21+	TO-3P	880000	明嘉萊只做原裝正品現(xiàn)貨	詢價(jià)
深圳市辰德隆電子科技有限公司	SVS35NF60PNIC	SILAN/士蘭微	23+	TO-3P	6000	一級(jí)代理只做原裝正品假一賠百	詢價(jià)
深圳市瑞新盛科技有限公司	SVS47N60P7	SILAN士蘭微	2019+	TO-247	87500	專營SL原裝士蘭微假一賠百	詢價(jià)
深圳市科恒偉業(yè)電子有限公司	SVS47N60P7	SILAN/士蘭微	2052+	TO247	9852	只做原裝正品現(xiàn)貨!或訂貨假一賠十!	詢價(jià)
深圳市億聯(lián)芯電子科技有限公司	SVS4N60D	SILAN/士蘭微	2023+	TO252	15000	原廠全新正品旗艦店優(yōu)勢(shì)現(xiàn)貨	詢價(jià)

更多SVS35N60PT供應(yīng)商更新時(shí)間2024-11-4 14:20:00

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