首頁 >TC9160P>規(guī)格書列表

零件編號(hào)下載&訂購功能描述制造商&上傳企業(yè)LOGO

9160

SimplePCIBridging

OXFORD

Oxford Semiconductor

9160

Electronic,8Pr#22SolTC,PVCIns,PVCJkt,CMG

ProductDescription Electronic,8Pair22AWG(Solid)TinnedCopper,PVCInsulation,PVCOuterJacket,CMG

BELDENBelden Inc.

百通電纜設(shè)計(jì)科技有限公司

9160

CountersunkTypeHRivets

HeycoHeyco.

???/span>

9160F

CountersunkTypeHRivets

HeycoHeyco.

???/span>

ACTF9160

RFFilter

ACT

Advanced Crystal Technology

BD9160FVM

1chDC竊?CConverterControllerICwithBuilt-inSynchronousRectifier

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

ECS-9160

ECS-9100,2GigELAN,4GigELANSwitchw/PoE,2SSDTray,8USB3.0,4COM,3SIM,16GPIO

VECOWVecow Co., Ltd.

超恩超恩股份有限公司

ECS-9160P

ECS-9100,2GigELAN,4GigELANSwitchw/LANBypass,2SSDTray,8USB3.0,4COM,3SIM,16GPIO

VECOWVecow Co., Ltd.

超恩超恩股份有限公司

EP9160

SMD28PinPassiveDelayLines

SMD28PinPassiveDelayLines

PCA

PCA ELECTRONICS INC.

FRE9160D

30A,-100V,0.095Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheIntersilCorporationSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with

Intersil

Intersil Corporation

FRE9160H

30A,-100V,0.095Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheIntersilCorporationSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with

Intersil

Intersil Corporation

FRE9160R

30A,-100V,0.095Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheIntersilCorporationSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with

Intersil

Intersil Corporation

FRK9160D

40A,-100V,0.085Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheHarrisSemiconductorSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with

Intersil

Intersil Corporation

FRK9160H

40A,-100V,0.085Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheHarrisSemiconductorSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with

Intersil

Intersil Corporation

FRK9160R

40A,-100V,0.085Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheHarrisSemiconductorSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with

Intersil

Intersil Corporation

FSJ9160

44A,-100V,0.055Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic

Intersil

Intersil Corporation

FSJ9160D

44A,-100V,0.055Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic

Intersil

Intersil Corporation

FSJ9160R

44A,-100V,0.055Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic

Intersil

Intersil Corporation

FSYC9160D

RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

Intersil

Intersil Corporation

FSYC9160R

RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

Intersil

Intersil Corporation

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
TOSHIBA
23+
DIP
9526
詢價(jià)
TOSHIBA
11+
DIP
8000
全新原裝,絕對(duì)正品現(xiàn)貨供應(yīng)
詢價(jià)
TOSHIBA
2016+
DIP-16
6528
只做原廠原裝現(xiàn)貨!終端客戶個(gè)別型號(hào)可以免費(fèi)送樣品!
詢價(jià)
TOSHIBA
2020+
DIP
2800
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
詢價(jià)
TOSHIBA
22+
DIP
8200
原裝現(xiàn)貨庫存.價(jià)格優(yōu)勢(shì)
詢價(jià)
TOSHIBA
24+
DIP
6430
原裝現(xiàn)貨/歡迎來電咨詢
詢價(jià)
TOS
23+
DIP16
6000
原裝正品假一罰百!可開增票!
詢價(jià)
TOS
2022
DIP16
1600
詢價(jià)
TOSHIBA/東芝
23+
DIP-16
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
TOSHIBA/東芝
2022+
DIP16
7500
原廠代理 終端免費(fèi)提供樣品
詢價(jià)
更多TC9160P供應(yīng)商 更新時(shí)間2025-1-14 17:19:00