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TGF4250中文資料TriQuint數(shù)據(jù)手冊PDF規(guī)格書

TGF4250
廠商型號

TGF4250

功能描述

4.8 mm Discrete HFET

文件大小

179.89 Kbytes

頁面數(shù)量

7

生產(chǎn)廠商 TriQuint Semiconductor
企業(yè)簡稱

TriQuint

中文名稱

TriQuint Semiconductor官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2024-10-25 17:08:00

TGF4250規(guī)格書詳情

Description

The TriQuint TGF4250-SCC is a single gate 4.8 mm discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high efficiency power applications up to 10.5 GHz in Class A and Class AB operation. Typical performance at 2 GHz is 34 dBm power output, 13 dB gain, and 53 PAE.

Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire bonding processes. The TGF4250-SCC is readily assembled using automatic equipment. For an Application Note on the use of HFETs, refer to the TriQuint website for the Millimeter Wave Division.

Key Features and Performance

? Nominal Pout of 34 dBm at 8.5 GHz

? Nominal Gain of 8.5 dB at 8.5 GHz

? Nominal PAE of 53 at 8.5 GHz

? Suitable for high reliability applications

? 4800 μm x 0.5 μm FET

? Chip dimensions: 0.61 x 1.37 x 0.1 mm (0.024 x 0.054 x 0.004 in)

? Bias at 8 Volts, 384 mA

Primary Applications

? Cellular Base Stations

? High-reliability space

? Military

產(chǎn)品屬性

  • 型號:

    TGF4250

  • 制造商:

    TRIQUINT

  • 制造商全稱:

    TriQuint Semiconductor

  • 功能描述:

    4.8 mm Discrete HFET

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