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TLV2762IDR

FAMILY OF 1.8 V MICROPOWER RAIL-TO-RAIL INPUT/OUTPUT OPERATIONAL AMPLIFIERS WITH SHUT DOWN

TITexas Instruments

德州儀器美國德州儀器公司

TLV2762IDR

FAMILY OF1.8V MICROPOWER RAIL-TO-RAIL OUTPUT

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TLV2762IP

FAMILYOF1.8VMICROPOWERRAIL-TO-RAILINPUT/OUTPUTOPERATIONALAMPLIFIERSWITHSHUTDOWN

TITexas Instruments

德州儀器美國德州儀器公司

TZ2762B

CrystalUnitSMD2.0x1.640.0MHz

Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount2.0mmx1.6mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan

TAI-SAW

TAI-SAW TECHNOLOGY CO., LTD.

TZ2762D

CrystalUnitSMD2.0x1.640.0MHz

Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount2.0mmx1.6mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan

TAI-SAW

TAI-SAW TECHNOLOGY CO., LTD.

TZ2762E

CrystalUnitSMD2.0x1.640.0MHz

Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount2.0mmx1.6mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan

TAI-SAW

TAI-SAW TECHNOLOGY CO., LTD.

U2762B

900-MHzISMBandReceiver

Temic

TEMIC Semiconductors

U2762B-BFS

900-MHzISMBandReceiver

Temic

TEMIC Semiconductors

UPA2762UGR

MOSFIELDEFFECTTRANSISTOR

Description TheμPA2762UGRisN-ChannelMOSFieldEffectTransistordesignedforpowermanagementapplicationsofanotebookcomputer. Features ?Lowon-stateresistance ?RDS(on)1=13.5mΩMAX.(VGS=10V,ID=12A) ?RDS(on)2=22mΩMAX.(VGS=4.5V,ID=10A) ?LowCiss:Ciss

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPC2762T

3V,2.9GHzSILICONMMICMEDIUMOUTPUTPOWERAMPLIFIERFORMOBILECOMMUNICATIONS

DESCRIPTION TheμPC8182TBisasiliconmonolithicintegratedcircuitdesignedasamplifierformobilecommunications.ThisICoperatesat3V.ThemediumoutputpowerissuitableforRF-TXofmobilecommunicationssystem. FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Circuitcurrent:ICC=3

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPC2762T

BIPOLARANALOGINTEGRATEDCIRCUITS

FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Mediumoutputpower:μPC2762TB;PO(1dB)=+8.0dBmTYP.@f=0.9GHz μPC2763TB;PO(1dB)=+9.5dBmTYP.@f=0.9GHz μPC2771TB;PO(1dB)=+11.5dBmTYP.@f=0.9GHz ?Powergain:μPC2762TB;GP=13dBTYP.@f=0.9GHz μPC2763TB;GP

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPC2762T

3V,WIDEBANDMEDIUMPOWERSIMMICAMPLIFIER

DESCRIPTION TheUPC2762TandUPC2763TareSiliconMonolithicintegratedcircuitswhicharemanufacturedusingtheNESATIIIprocess.TheNESATIIIprocessproducestransistorswithfTapproaching20GHz.Theseamplifiersweredesignedfor900MHzand1.9GHzreceiversincellular,cordlessteleph

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPC2762T

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Circuitcurrent:ICC=30mATYP.@VCC=3.0V ?Mediumoutputpower:PO(1dB)=+9.5dBmTYP.@f=0.9GHz PO(1dB)=+9.0dBmTYP.@f=1.9GHz PO(1dB)=+8.0dBmTYP.@f=2.4GHz ?Powergain:GP=21.5dBTYP.@f=0.9GHz GP=20.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPC2762T

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Circuitcurrent:ICC=23.0mATYP.@VCC=3.0V ?Mediumoutputpower:PO(1dB)=+8.0dBmTYP.@f=0.9GHz PO(1dB)=+7.0dBmTYP.@f=1.9GHz PO(1dB)=+7.0dBmTYP.@f=2.4GHz ?Powergain:GP=19.0dBTYP.@f=0.9GHz GP=2

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPC2762TB

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Circuitcurrent:ICC=30mATYP.@VCC=3.0V ?Mediumoutputpower:PO(1dB)=+9.5dBmTYP.@f=0.9GHz PO(1dB)=+9.0dBmTYP.@f=1.9GHz PO(1dB)=+8.0dBmTYP.@f=2.4GHz ?Powergain:GP=21.5dBTYP.@f=0.9GHz GP=20.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPC2762TB

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Circuitcurrent:ICC=23.0mATYP.@VCC=3.0V ?Mediumoutputpower:PO(1dB)=+8.0dBmTYP.@f=0.9GHz PO(1dB)=+7.0dBmTYP.@f=1.9GHz PO(1dB)=+7.0dBmTYP.@f=2.4GHz ?Powergain:GP=19.0dBTYP.@f=0.9GHz GP=2

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPC2762TB

BIPOLARANALOGINTEGRATEDCIRCUITS

FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Mediumoutputpower:μPC2762TB;PO(1dB)=+8.0dBmTYP.@f=0.9GHz μPC2763TB;PO(1dB)=+9.5dBmTYP.@f=0.9GHz μPC2771TB;PO(1dB)=+11.5dBmTYP.@f=0.9GHz ?Powergain:μPC2762TB;GP=13dBTYP.@f=0.9GHz μPC2763TB;GP

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPC2762TB

3V,SUPERMINIMOLDSILICONMMICMEDIUMOUTPUTPOWERAMPLIFIERFORMOBILECOMMUNICATIONS

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPC2762TB

3V,SUPERMINIMOLDMEDIUMPOWERSIMMICAMPLIFIER

CEL

California Eastern Laboratories

UPC2762TB

3V,2.9GHzSILICONMMICMEDIUMOUTPUTPOWERAMPLIFIERFORMOBILECOMMUNICATIONS

DESCRIPTION TheμPC8182TBisasiliconmonolithicintegratedcircuitdesignedasamplifierformobilecommunications.ThisICoperatesat3V.ThemediumoutputpowerissuitableforRF-TXofmobilecommunicationssystem. FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Circuitcurrent:ICC=3

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

詳細(xì)參數(shù)

  • 型號：

    TLV2762IDR

  • 功能描述：

    運(yùn)算放大器 - 運(yùn)放 Dual Micropwr R-to-R Single Supply

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 通道數(shù)量：

    4

  • 共模抑制比（最小值）：

    63 dB

  • 輸入補(bǔ)償電壓：

    1 mV

  • 輸入偏流（最大值）：

    10 pA

  • 工作電源電壓：

    2.7 V to 5.5 V

  • 安裝風(fēng)格：

    SMD/SMT

  • 封裝/箱體：

    QFN-16

  • 轉(zhuǎn)換速度：

    0.89 V/us

  • 關(guān)閉：

    No

  • 輸出電流：

    55 mA

  • 最大工作溫度：

    + 125 C

  • 封裝：

    Reel

供應(yīng)商型號品牌批號封裝庫存備注價格
Texas Instruments
24+
8-SOIC(0.154,3.90mm 寬)
25000
in stock線性IC-原裝正品
 詢價
TI/德州儀器
22+
SOP-8
6180
原廠原裝現(xiàn)貨
 詢價
TI
2021+
SOP8
9450
原裝現(xiàn)貨。
 詢價
TI/德州儀器
24+
SOP8
5050
只做原廠渠道 可追溯貨源
 詢價
TI/德州儀器
21+
SOP
9800
只做原裝正品假一賠十!正規(guī)渠道訂貨!
 詢價
TI(德州儀器)
23+
SOP-8
9555
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
TI
22+
23+
6517
專注配單,只做原裝現(xiàn)貨
 詢價
TI
2016+
SOP8
4758
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
TI
11+
SOP8
8000
全新原裝,絕對正品現(xiàn)貨供應(yīng)
 詢價
TI進(jìn)口原裝
17+
SOP8
6200
100%原裝正品現(xiàn)貨
 詢價
更多TLV2762IDR供應(yīng)商 更新時間2024-10-25 21:12:00

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