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TSM1N60LCH中文資料臺(tái)灣半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

TSM1N60LCH
廠商型號(hào)

TSM1N60LCH

功能描述

N-Channel Power Enhancement Mode MOSFET

文件大小

173.91 Kbytes

頁(yè)面數(shù)量

4 頁(yè)

生產(chǎn)廠商 Taiwan Semiconductor Company, Ltd
企業(yè)簡(jiǎn)稱

TSC臺(tái)灣半導(dǎo)體

中文名稱

臺(tái)灣半導(dǎo)體股份有限公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2024-12-30 23:00:00

TSM1N60LCH規(guī)格書詳情

General Description

The TSM1N60L is used an advanced termination schemeto provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time. Designed for high voltage, highspeed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.

Features

● Robust high voltage termination

● Avalanche energy specified

● Diode is characterized for use in bridge circuits

● Source to Drain diode recovery time comparable to a discrete fast recovery diode.

● IDSS and VDS(on) specified at elevated temperature

產(chǎn)品屬性

  • 型號(hào):

    TSM1N60LCH

  • 功能描述:

    MOSFET 600V 1.0A 2.5W

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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