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TSM1N60LCH中文資料臺灣半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書
TSM1N60LCH規(guī)格書詳情
General Description
The TSM1N60L is used an advanced termination schemeto provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time. Designed for high voltage, highspeed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.
Features
● Robust high voltage termination
● Avalanche energy specified
● Diode is characterized for use in bridge circuits
● Source to Drain diode recovery time comparable to a discrete fast recovery diode.
● IDSS and VDS(on) specified at elevated temperature
產(chǎn)品屬性
- 型號：
TSM1N60LCH
- 功能描述：
MOSFET 600V 1.0A 2.5W
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
taiwansemi |
22+ |
TO-251 |
6000 |
十年配單,只做原裝 |
詢價 | ||
TSC |
21+ |
TO-252 |
9999 |
原裝現(xiàn)貨假一賠十 |
詢價 | ||
TSC |
23+ |
TO251 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
TAIWAN SEMI |
24+ |
NA |
5000 |
全新原裝正品,現(xiàn)貨銷售 |
詢價 | ||
TSC |
24+ |
TO251 |
11000 |
原裝正品 有掛有貨 假一賠十 |
詢價 | ||
TSC |
24+ |
TO-252 |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價 | ||
TAIWAN SEMICONDUCTOR |
23+ |
TO251 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
TSC/臺半 |
2447 |
TO-252 |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
TSC |
20+ |
TO-252 |
12888 |
進(jìn)口原裝現(xiàn)貨,假一賠十 |
詢價 | ||
TOSHIBA |
22+ |
TO-251 |
3000 |
原裝正品,支持實單 |
詢價 |
