TTC007

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TTC008

Marking：C008；Package：PW-Mold2；Bipolar Transistors Silicon NPN Triple-Diffused Type

Applications ?High-SpeedHigh-VoltageSwitching ?SwitchingVoltageRegulators ?High-SpeedDC-DCConverters Features (1)Highcollector-emittervoltage:VCEO=285V,VCES=600V (2)HighDCcurrentgain:hFE=100to200(IC=0.3A) (3)Excellentswitchingtimes:tf=0.1μs(typ.)

TTC009

TOSHIBA Transistor Silicon NPN Epitaxial Type

○PowerAmplifierApplications ○PowerSwitchingApplications ?Lowcollector-emittersaturationvoltage:VCE(sat)=0.5V(max)（IC=1A） ?High-speedswitching:tstg=0.4μs(typ.)

TTC011B

Marking：C011B；Package：TO-126N；Bipolar Transistors Silicon NPN Epitaxial Type

Applications ?PowerAmplifiers ?Audio-FrequencyAmplifiers Features (1)Highcollectorvoltage:VCEO=230V(min) (2)Smallcollectoroutputcapacitance:Cob=20pF(typ.) (3)Hightransitionfrequency:fT=100MHz(typ.) (4)ComplementarytoTTA006B

TTC012

Bipolar Transistors Silicon NPN Triple-Diffused Type

Features (1)Highspeedswitching:tf=0.15μs(typ.)(IC=0.5A) (2)Highcollectorbreakdownvoltage:VCES=800V,VCEO=375V Applications ?High-SpeedHigh-VoltageSwitching ?SwitchingVoltageRegulators ?High-SpeedDC-DCConverters

TTC013

Marking：4R；Package：PW-Mini；Bipolar Transistors Silicon NPN Triple-Diffused Type

Applications ?High-VoltageSwitching ?LCDBacklighting Features (1)Highcollectorbreakdownvoltage:VCEO=350V (2)HighDCcurrentgain:hFE=100to200(IC=50mA)

TTC014

Marking：C014；Package：PW-Mold；Bipolar Transistors Silicon NPN Triple-Diffused Type

Applications ?High-SpeedHigh-VoltageSwitching ?SwitchingVoltageRegulators ?High-SpeedDC-DCConverters Features (1)HighDCcurrentgain:hFE=100to200(IC=0.1A) (2)Highcollectorbreakdownvoltage:VCEO=800V,VCBO=900V (3)High-speedswitching:tr=0.2μs(typ.),

TTC015B

Marking：C015B；Package：TO-126N；Bipolar Transistors Silicon NPN Epitaxial Type

Applications ?PowerAmplifiers ?PowerSwitching Features (1)HighDCcurrentgain:hFE=100to200(IC=0.5A) (2)Lowcollectoremittersaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) (3)High-speedswitching:tstg=400ns(typ.)(IC=1A) (4)ComplementarytoTTA008B

TTC016

isc Silicon NPN Power Transistor

DESCRIPTION ·HighBreakdownVoltage :VCEO=50V(Min) ·HighSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Horizontaldeflectionoutputforhighresolutiondisplay. ·Highspeedswitchingregulatoroutputapplications.

TTC016

Marking：C016；Package：PW-Mold；Bipolar Transistors Silicon NPN Epitaxial Type

Applications ?High-SpeedSwitching ?DC-DCConverters Features (1)HighDCcurrentgain:hFE=400to1000(IC=0.5A) (2)Lowcollectorsaturationvoltage:VCE(sat)=0.22V(max)(IC=1.6A,IB=32mA) (3)High-speedswitching:tf=95ns(typ.)