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UN

Coupling for Multiple-Disk Clutch

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

UN010DN26TE

Dual N-Channel Enhancement Mode MOSFET

Features AdvancedTrenchProcessTechnology LowThresholdVoltage FastSwitchingSpeed Halogen-Free&Lead-Free Applications LoadSwitchforPortableDevices VoltageControlledSmallSignalSwitch

UNSEMIUN Semiconducctor INC

優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司

UN010N88DE

N-Channel Enhancement Mode MOSFET

Features AdvancedTrenchProcessTechnology LowThresholdVoltage FastSwitchingSpeed Halogen-Free&Lead-Free Applications LoadSwitchforPortableDevices VoltageControlledSmallSignalSwitch

UNSEMIUN Semiconducctor INC

優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司

UN0201

MULTILAYER CHIP VARISTORS

Feature SMDtypezincoxidebasedceramicchip Insulatorovercoatkeepsexcellentlowandstableleakage current Platingterminationprovidedgoodsolderabilitycharacteristic Quickresponsetime(

UNSEMIUN Semiconducctor INC

優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司

UN0201-0603

MULTILAYER CHIP VARISTORS

Feature SMDtypezincoxidebasedceramicchip Insulatorovercoatkeepsexcellentlowandstableleakage current Platingterminationprovidedgoodsolderabilitycharacteristic Quickresponsetime(

UNSEMIUN Semiconducctor INC

優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司

UN0201M05V330P

MULTILAYER CHIP VARISTORS

Feature SMDtypezincoxidebasedceramicchip Insulatorovercoatkeepsexcellentlowandstableleakage current Platingterminationprovidedgoodsolderabilitycharacteristic Quickresponsetime(

UNSEMIUN Semiconducctor INC

優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司

UN0201M05V470P

MULTILAYER CHIP VARISTORS

Feature SMDtypezincoxidebasedceramicchip Insulatorovercoatkeepsexcellentlowandstableleakage current Platingterminationprovidedgoodsolderabilitycharacteristic Quickresponsetime(

UNSEMIUN Semiconducctor INC

優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司

UN0201M05V640P

MULTILAYER CHIP VARISTORS

Feature SMDtypezincoxidebasedceramicchip Insulatorovercoatkeepsexcellentlowandstableleakage current Platingterminationprovidedgoodsolderabilitycharacteristic Quickresponsetime(

UNSEMIUN Semiconducctor INC

優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司

UN0231C

RF Power Amplifier Module

RFPowerAmplifierModule Forthepreamplifierofthetransmittingsectioninacellularphone ■Features ?Highefficiencywithsuperminiature,0.08ccpackage(7.5×7.5×1.7mm)

PanasonicPanasonic Semiconductor

松下松下電器

UN0231N

RF Power Amplifier Module

RFPowerAmplifierModule Forthepreamplifierofthetransmittingsectioninacellularphone ■Features ?Highefficiencywithsuperminiature,0.08ccpackage(7.5×7.5×1.7mm)

PanasonicPanasonic Semiconductor

松下松下電器

UN0301N7R0-S08

N-Channel Enhancement Mode MOSFET

Feature ProprietaryTrenchGateDeviceDesign andProcesses 100AvalancheTested ReliableandRugged RoHScompliant Applications PowerManagementinLoadSwitch Motorcontrolanddrive Lithiumbatteryprotection GeneralPurpose

UNSEMIUN Semiconducctor INC

優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司

UN0301P9R5-S08

P-Channel Enhancement Mode MOSFET

Feature ProprietaryTrenchGateDeviceDesign andProcesses 100AvalancheTested ReliableandRugged RoHScompliant Applications PowerManagementinLoadSwitch Motorcontrolanddrive Lithiumbatteryprotection GeneralPurpose

UNSEMIUN Semiconducctor INC

優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司

UN0302P9R0-T52

P-Channel Enhancement Mode MOSFET

Feature ProprietaryTrenchGateDeviceDesign andProcesses 100AvalancheTested ReliableandRugged RoHScompliant Applications PowerManagementinLoadSwitch Motorcontrolanddrive Lithiumbatteryprotection GeneralPurpose

UNSEMIUN Semiconducctor INC

優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司

UN0306N6R5-S08

N-Channel Enhancement Mode MOSFET

Feature ProprietaryTrenchGateDeviceDesign andProcesses 100AvalancheTested ReliableandRugged RoHScompliant Applications DC/DCConverter BatteryManagementSystem IndustrialandMotorDriveapplications GeneralPurpose

UNSEMIUN Semiconducctor INC

優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司

UN0308N6R0-S08

N-Channel Enhancement Mode MOSFET

Feature ProprietaryTrenchGateDeviceDesign andProcesses 100AvalancheTested ReliableandRugged RoHScompliant Applications DC/DCConverter BatteryManagementSystem IndustrialandMotorDriveapplications GeneralPurpose

UNSEMIUN Semiconducctor INC

優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司

UN0309N3R2-T52

N-Channel Enhancement Mode MOSFET

Feature VeryLowOn-resistanceRDS(ON) LowCrss Fastswitching 100avalanchetested Improveddv/dtcapability Applications PWMApplication LoadSwitch PowerManagement

UNSEMIUN Semiconducctor INC

優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司

UN0315N1R6-PD56

N-Channel Enhancement Mode MOSFET

Feature ProprietaryTrenchGateDeviceDesignandProcesses Extremelylowon-resistanceRDS(ON) 100AvalancheTested ReliableandRugged RoHScompliant Applications DC/DCConverter BatteryManagementSystem IndustrialandMotorDriveapplications Synchronousrectifierapplications

UNSEMIUN Semiconducctor INC

優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司

UN0325N0R8-PD56

N-Channel Enhancement Mode MOSFET

Feature ProprietaryTrenchGateDeviceDesignandProcesses Extremelylowon-resistanceRDS(ON) 100AvalancheTested ReliableandRugged RoHScompliant Applications DC/DCConverter BatteryManagementSystem IndustrialandMotorDriveapplications Synchronousrectifierapplications

UNSEMIUN Semiconducctor INC

優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司

UN035N014-S08

N-Channel Enhancement Mode MOSFET

Feature ProprietaryTrenchGateDeviceDesign andProcesses 100AvalancheTested ReliableandRugged RoHScompliant Applications PowerManagementinLoadSwitch Motorcontrolanddrive Lithiumbatteryprotection GeneralPurpose

UNSEMIUN Semiconducctor INC

優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司

UN0401N8R5-S08

N-Channel Enhancement Mode MOSFET

Feature ProprietaryTrenchGateDeviceDesign andProcesses 100AvalancheTested ReliableandRugged RoHScompliant Applications PowerManagementinLoadSwitch Motorcontrolanddrive Lithiumbatteryprotection GeneralPurpose

UNSEMIUN Semiconducctor INC

優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司

晶體管資料

  • 型號(hào):

    UN1110

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-P+R

  • 性質(zhì):

    開關(guān)管 (S)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    50V

  • 最大電流允許值:

    0.1A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    3

  • 可代換的型號(hào):

    AN1L4Z,DTA144TS,KSR2012,2SA1509,

  • 最大耗散功率:

    0.4W

  • 放大倍數(shù):

  • 圖片代號(hào):

    A-68

  • vtest:

    50

  • htest:

    999900

  • atest:

    0.1

  • wtest:

    0.4

詳細(xì)參數(shù)

  • 型號(hào):

    UN

  • 制造商:

    Daylight

  • 功能描述:

    13W Naturalight™ Replacement Tube for UN1017 Compact Lamp

  • 制造商:

    DAYLIGHT

  • 功能描述:

    13W NATURALIGHT TUBE FOR UN1017

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