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UPA2727UT1A

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheμPA2727UT1AisN-channelMOSFETdesignedforDC/DCconverterapplications. FEATURES ?Lowon-stateresistance RDS(on)1=9.6mΩMAX.(VGS=10V,ID=8A) RDS(on)2=15mΩMAX.(VGS=4.5V,ID=8A) ?LowQGD QGD=3.5nCTYP.(VDD=15V,ID=16A) ?Thintyp

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPA2727UT1A

N-Channel 30 V (D-S) MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?100RgandUISTested APPLICATIONS ?NotebookPCCore ?VRM/POL

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

UPA2727UT1A

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheμPA2727UT1AisN-channelMOSFETdesignedforDC/DCconverterapplications. FEATURES ?Lowon-stateresistance RDS(on)1=9.6mΩMAX.(VGS=10V,ID=8A) RDS(on)2=15mΩMAX.(VGS=4.5V,ID=8A) ?LowQGD QGD=3.5nCTYP.(VDD=15V,ID=16A) ?Thintypesurface

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA2727UT1A-E1-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheμPA2727UT1AisN-channelMOSFETdesignedforDC/DCconverterapplications. FEATURES ?Lowon-stateresistance RDS(on)1=9.6mΩMAX.(VGS=10V,ID=8A) RDS(on)2=15mΩMAX.(VGS=4.5V,ID=8A) ?LowQGD QGD=3.5nCTYP.(VDD=15V,ID=16A) ?Thintyp

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPA2727UT1A-E1-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheμPA2727UT1AisN-channelMOSFETdesignedforDC/DCconverterapplications. FEATURES ?Lowon-stateresistance RDS(on)1=9.6mΩMAX.(VGS=10V,ID=8A) RDS(on)2=15mΩMAX.(VGS=4.5V,ID=8A) ?LowQGD QGD=3.5nCTYP.(VDD=15V,ID=16A) ?Thintypesurface

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA2727UT1A-E1-AZ

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheμPA2727UT1AisN-channelMOSFETdesignedforDC/DCconverterapplications. FEATURES ?Lowon-stateresistance RDS(on)1=9.6mΩMAX.(VGS=10V,ID=8A) RDS(on)2=15mΩMAX.(VGS=4.5V,ID=8A) ?LowQGD QGD=3.5nCTYP.(VDD=15V,ID=16A) ?Thintyp

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPA2727UT1A-E1-AZ

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheμPA2727UT1AisN-channelMOSFETdesignedforDC/DCconverterapplications. FEATURES ?Lowon-stateresistance RDS(on)1=9.6mΩMAX.(VGS=10V,ID=8A) RDS(on)2=15mΩMAX.(VGS=4.5V,ID=8A) ?LowQGD QGD=3.5nCTYP.(VDD=15V,ID=16A) ?Thintypesurface

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA2727UT1A-E2-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheμPA2727UT1AisN-channelMOSFETdesignedforDC/DCconverterapplications. FEATURES ?Lowon-stateresistance RDS(on)1=9.6mΩMAX.(VGS=10V,ID=8A) RDS(on)2=15mΩMAX.(VGS=4.5V,ID=8A) ?LowQGD QGD=3.5nCTYP.(VDD=15V,ID=16A) ?Thintyp

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPA2727UT1A-E2-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheμPA2727UT1AisN-channelMOSFETdesignedforDC/DCconverterapplications. FEATURES ?Lowon-stateresistance RDS(on)1=9.6mΩMAX.(VGS=10V,ID=8A) RDS(on)2=15mΩMAX.(VGS=4.5V,ID=8A) ?LowQGD QGD=3.5nCTYP.(VDD=15V,ID=16A) ?Thintypesurface

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA2727UT1A-E2-AZ

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheμPA2727UT1AisN-channelMOSFETdesignedforDC/DCconverterapplications. FEATURES ?Lowon-stateresistance RDS(on)1=9.6mΩMAX.(VGS=10V,ID=8A) RDS(on)2=15mΩMAX.(VGS=4.5V,ID=8A) ?LowQGD QGD=3.5nCTYP.(VDD=15V,ID=16A) ?Thintyp

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

詳細(xì)參數(shù)

  • 型號：

    UPA2727

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    MOS FIELD EFFECT TRANSISTOR

供應(yīng)商型號品牌批號封裝庫存備注價格
NEC
2020+
QFN8/3K
350000
100%進(jìn)口原裝正品公司現(xiàn)貨庫存
 詢價
NEC
0840+
QFN8/3K
6000
絕對原裝自己現(xiàn)貨
 詢價
NEC
1709+
QFN8/3K
12000
普通
 詢價
VBSEMI/臺灣微碧
23+
QFN83K
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
NEC
1535+
1076
詢價
NEC
22+
QFN83K
25000
只有原裝絕對原裝,支持BOM配單!
 詢價
NEC
22+
QFN83K
25000
只有原裝原裝,支持BOM配單
 詢價
NEC ELECTRONICS
2023+
SMD
1076
安羅世紀(jì)電子只做原裝正品貨
 詢價
NEC
23+
1076
全新原裝，歡迎來電咨詢
 詢價
NEC
23+
TDSN-8
8560
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
更多UPA2727供應(yīng)商 更新時間2025-1-24 9:00:00

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