V53C816H40中文資料茂矽電子數(shù)據(jù)手冊PDF規(guī)格書

Description

The V53C816H is a 524,288 x 16 bit high-performance CMOS dynamic random access memory. The V53C816H offers Fast Page mode with dual CAS inputs. An address, CAS and RAS input capacitances are reduced to one half when the 256Kx16 DRAM is used to construct the same memory density. The V53C816H has asymmetric address, 10-bit row and 9-bit column.

All inputs are TTL compatible. Fast Page Mode operation allows random access up to 512K x 16 bits, within a page, with cycle times as short as 23ns.

The V53C816H is best suited for graphics, and buffer memory applications.

Features

■ 512K x 16-bit organization

■ RAS access time: 40, 45, 50, 60 ns

■ Fast Page Mode for a sustained data rate of 43 MHz

■ Dual CAS Inputs

■ Pin-to-Pin compatible with 256Kx16

■ Low power dissipation

■ Read-Modify-Write, RAS-Only Refresh, CAS-Before-RAS Refresh

■ Refresh Interval: 512 cycles/8 ms

■ Available in 40-pin 400 mil SOJ

■ Single +5V Power Supply

■ TTL Interface