V54C316162中文資料茂矽電子數(shù)據(jù)手冊(cè)PDF規(guī)格書

Description

The V54C316162V is a 16,777,216 bits synchronous high data rate DRAM organized as 2 x 524,288 words by 16 bits. The device is designed to comply with JEDEC standards set for synchronous DRAM products, both electrically and mechanically. Synchronous design allows precise cycle control with the system clock. The CAS latency, burst length and burst sequence must be programmed into device prior to access operation.

Features

■ JEDEC Standard 3.3V Power Supply

■ The V54C316162V is ideally suited for high performance graphics peripheral applications

■ Single Pulsed RAS Interface

■ Programmable CAS Latency: 2, 3

■ All Inputs are sampled at the positive going edge of clock

■ Programmable Wrap Sequence: Sequential or Interleave

■ Programmable Burst Length: 1, 2, 4, 8 and Full Page for Sequential and 1, 2, 4, 8 for Interleave

■ UDQM & LDQM for byte masking

■ Auto & Self Refresh

■ 4K Refresh Cycles/64 ms

■ Burst Read with Single Write Operation