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VB30120C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier UltraLowVF=0.50VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified

VishayVishay Siliconix

威世科技威世科技半導體

VB30120C

Dual High Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導體

VB30120C-E3

Trench MOS Schottky technology

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier UltraLowVF=0.50VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263AB

VishayVishay Siliconix

威世科技威世科技半導體

VB30120C-E3/4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier UltraLowVF=0.50VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified

VishayVishay Siliconix

威世科技威世科技半導體

VB30120C-E3/8W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier UltraLowVF=0.50VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified

VishayVishay Siliconix

威世科技威世科技半導體

VB30120C-E3/4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導體

VB30120C-E3/8W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導體

VB30120C-E3/4W

包裝：卷帶（TR） 封裝/外殼：TO-263-3，D2Pak（2 引線 + 接片），TO-263AB 類別：分立半導體產(chǎn)品 二極管 - 整流器 - 陣列 描述：DIODE ARRAY SCHOTTKY 120V TO263

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

VB30120C-E3/8W

包裝：卷帶（TR） 封裝/外殼：TO-263-3，D2Pak（2 引線 + 接片），TO-263AB 類別：分立半導體產(chǎn)品 二極管 - 整流器 - 陣列 描述：DIODE ARRAY SCHOTTKY 120V TO263

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

VB30120S

HighVoltageTrenchMOSBarrierSchottkyRectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C(forTO-263AB package) ?Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220AB,

VishayVishay Siliconix

威世科技威世科技半導體

VB30120S

High-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.43VatIF=5A

VishayVishay Siliconix

威世科技威世科技半導體

VB30120SG

High-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.47VatIF=5A

High-VoltageTrenchMOSBarrierSchottkyRectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature2

VishayVishay Siliconix

威世科技威世科技半導體

VB30120SG

High-VoltageTrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半導體

VB30120SG

High-VoltageTrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半導體

VF30120C

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半導體

VF30120C

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.50VatIF=5A

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier UltraLowVF=0.50VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified

VishayVishay Siliconix

威世科技威世科技半導體

VF30120C

DualHighVoltageTrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半導體

VF30120C

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s, perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION

VishayVishay Siliconix

威世科技威世科技半導體

VF30120S

HighVoltageTrenchMOSBarrierSchottkyRectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C(forTO-263AB package) ?Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220AB,

VishayVishay Siliconix

威世科技威世科技半導體

VF30120S

High-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.43VatIF=5A

VishayVishay Siliconix

威世科技威世科技半導體

詳細參數(shù)

  • 型號：

    VB30120C

  • 制造商：

    VISHAY

  • 制造商全稱：

    Vishay Siliconix

  • 功能描述：

    Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

供應商型號品牌批號封裝庫存備注價格
VISHAY
23+
TO-263
8600
全新原裝現(xiàn)貨
 詢價
VISHAY/威世
1926+
TO-263
6852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
DIOS
23+
SOT-23
69820
終端可以免費供樣,支持BOM配單!
 詢價
VISHAY/威世
23+
TO-263
90000
只做原廠渠道價格優(yōu)勢可提供技術支持
 詢價
VISHAY/威世
23+
TO-263
10000
公司只做原裝正品
 詢價
VISHAY/威世通
22+
TO-263
6000
十年配單,只做原裝
 詢價
VISHAY/威世通
23+
TO-263
6000
原裝正品，支持實單
 詢價
VISHAY/威世通
22+
TO-263
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
VISHAY
24+
TO-263
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
VISHAY
TO-252
17432
提供BOM表配單只做原裝貨值得信賴
 詢價
更多VB30120C供應商 更新時間2024-11-2 14:02:00

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