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VBE16R05S

N-Channel 600V(D-S) Super Junction Power MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalanche andCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

VBE16R05

PowerMOSFET

FEATURES ?UltraLowGateCharge ?ReducedGateDriveRequirement ?Enhanced30V,VGSRating ?ReducedCiss,Coss,Crss ?ExtremelyHighFrequencyOperation ?RepetitiveAvalancheRated ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

VBFB16R05

PowerMOSFET

FEATURES ?UltraLowGateCharge ?ReducedGateDriveRequirement ?Enhanced30V,VGSRating ?ReducedCiss,Coss,Crss ?ExtremelyHighFrequencyOperation ?RepetitiveAvalancheRated ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

VBFB16R05S

N-Channel600V(D-S)SuperJunctionPowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalanche andCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

VBM16R05

PowerMOSFET

FEATURES ?UltraLowGateCharge ?ReducedGateDriveRequirement ?Enhanced30V,VGSRating ?ReducedCiss,Coss,Crss ?ExtremelyHighFrequencyOperation ?RepetitiveAvalancheRated ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

VBM16R05S

N-Channel600V(D-S)SuperJunctionPowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalanche andCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

VBMB16R05

PowerMOSFET

FEATURES ?UltraLowGateCharge ?ReducedGateDriveRequirement ?Enhanced30V,VGSRating ?ReducedCiss,Coss,Crss ?ExtremelyHighFrequencyOperation ?RepetitiveAvalancheRated ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

VBMB16R05S

N-Channel600V(D-S)SuperJunctionPowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalanche andCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS
22+
ECOPAC1
9000
原廠渠道,現(xiàn)貨配單
 詢價
IXYS
23+
ECOPAC1
9000
原裝正品，支持實單
 詢價
IXYS
23+
RECTIFIERBRIDGE
1690
專業(yè)代理銷售半導(dǎo)體模塊,能提供更多數(shù)量
 詢價
IXYS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IXYS
21+
ECO-PAC1
1000
主打產(chǎn)品價格優(yōu)惠.全新原裝正品
 詢價
IXYS
1931+
N/A
18
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
IXYS
1809+
ECO-PAC1
326
就找我吧!--邀您體驗愉快問購元件!
 詢價
IXYS
22+
NA
18
加我QQ或微信咨詢更多詳細信息,
 詢價
IXYS
23+
標(biāo)準(zhǔn)封裝
5000
原廠授權(quán)一級代理 IGBT模塊 可控硅 晶閘管 熔斷器質(zhì)保
 詢價
IXYS
23+
N/A
12500
IXYS全系列在售
 詢價
更多VBE16R05S供應(yīng)商 更新時間2024-10-25 16:11:00

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