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VBFB16R05

Power MOSFET

FEATURES ?UltraLowGateCharge ?ReducedGateDriveRequirement ?Enhanced30V,VGSRating ?ReducedCiss,Coss,Crss ?ExtremelyHighFrequencyOperation ?RepetitiveAvalancheRated ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

VBFB16R05S

N-Channel 600V(D-S) Super Junction Power MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalanche andCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

VBE16R05

PowerMOSFET

FEATURES ?UltraLowGateCharge ?ReducedGateDriveRequirement ?Enhanced30V,VGSRating ?ReducedCiss,Coss,Crss ?ExtremelyHighFrequencyOperation ?RepetitiveAvalancheRated ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

VBE16R05S

N-Channel600V(D-S)SuperJunctionPowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalanche andCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

VBM16R05

PowerMOSFET

FEATURES ?UltraLowGateCharge ?ReducedGateDriveRequirement ?Enhanced30V,VGSRating ?ReducedCiss,Coss,Crss ?ExtremelyHighFrequencyOperation ?RepetitiveAvalancheRated ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

VBM16R05S

N-Channel600V(D-S)SuperJunctionPowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalanche andCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

VBMB16R05

PowerMOSFET

FEATURES ?UltraLowGateCharge ?ReducedGateDriveRequirement ?Enhanced30V,VGSRating ?ReducedCiss,Coss,Crss ?ExtremelyHighFrequencyOperation ?RepetitiveAvalancheRated ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

VBMB16R05S

N-Channel600V(D-S)SuperJunctionPowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalanche andCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
VBsemi(臺灣微碧)
2112+
TO251
105000
80個/管一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期
 詢價
24+
N/A
48000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
VBSEMI臺灣微碧
23+
TO251
22820
原裝正品，支持實單
 詢價
CINCH
20+
連接器
493
就找我吧!--邀您體驗愉快問購元件!
 詢價
Cinch
22+
NA
65
加我QQ或微信咨詢更多詳細信息,
 詢價
Siemens
2022+
2
全新原裝 貨期兩周
 詢價
Mini-circuits
18+
原廠原裝
6000
專注Mini射頻微波全系列,只做原裝正品,現(xiàn)貨庫存
 詢價
MINI
2018+
SMD
3600
MINI專營品牌全新原裝正品假一賠十
 詢價
MINI
三年內(nèi)
1983
納立只做原裝正品13590203865
 詢價
MINI-CIRCUITS
21+
23
詢價
更多VBFB16R05供應(yīng)商 更新時間2024-10-25 15:00:00

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