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VBMB16R05

Power MOSFET

FEATURES ?UltraLowGateCharge ?ReducedGateDriveRequirement ?Enhanced30V,VGSRating ?ReducedCiss,Coss,Crss ?ExtremelyHighFrequencyOperation ?RepetitiveAvalancheRated ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

VBMB16R05S

N-Channel 600V(D-S) Super Junction Power MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalanche andCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

VBE16R05

PowerMOSFET

FEATURES ?UltraLowGateCharge ?ReducedGateDriveRequirement ?Enhanced30V,VGSRating ?ReducedCiss,Coss,Crss ?ExtremelyHighFrequencyOperation ?RepetitiveAvalancheRated ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

VBE16R05S

N-Channel600V(D-S)SuperJunctionPowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalanche andCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

VBFB16R05

PowerMOSFET

FEATURES ?UltraLowGateCharge ?ReducedGateDriveRequirement ?Enhanced30V,VGSRating ?ReducedCiss,Coss,Crss ?ExtremelyHighFrequencyOperation ?RepetitiveAvalancheRated ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

VBFB16R05S

N-Channel600V(D-S)SuperJunctionPowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalanche andCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

VBM16R05

PowerMOSFET

FEATURES ?UltraLowGateCharge ?ReducedGateDriveRequirement ?Enhanced30V,VGSRating ?ReducedCiss,Coss,Crss ?ExtremelyHighFrequencyOperation ?RepetitiveAvalancheRated ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

VBM16R05S

N-Channel600V(D-S)SuperJunctionPowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalanche andCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
VBsemi(臺(tái)灣微碧)
2112+
TO-220F
105000
50個(gè)/管一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期
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VBSEMI
24+
con
35960
查現(xiàn)貨到京北通宇商城
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VBSEMI
24+
con
35960
查現(xiàn)貨到京北通宇商城
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VBSEMI臺(tái)灣微碧
23+
TO220F
22820
原裝正品，支持實(shí)單
 詢(xún)價(jià)
24+
N/A
69000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
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AD
24+
SOT25
4897
絕對(duì)原裝!現(xiàn)貨熱賣(mài)!
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AD
24+
SOT25
10000
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TI
17+
SOT23-6
6200
100%原裝正品現(xiàn)貨
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TI
16+
SOT23-6
10000
進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢(shì)!
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更多VBMB16R05供應(yīng)商 更新時(shí)間2024-12-23 15:00:00

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