首頁 >VND1NV04TR-E>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
VND1NV04TR-E | 包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 封裝/外殼:TO-252-3,DPak(2 引線 + 接片),SC-63 類別:集成電路(IC) 配電開關,負載驅(qū)動器 描述:IC PWR DRIVER N-CHANNEL 1:1 DPAK | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | |
??MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET Description TheVND1NV04,VNN1NV04,VNS1NV04aremonolithicdevicesdesignedinSTMicroelectronicsVIPowerM0-3Technology,intendedforreplacementofstandardPowerMOSFETsfromDCupto50KHzapplications. Builtinthermalshutdown,linearcurrentlimitationandovervoltageclampprotect | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
fullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
fullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
??MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET Description TheVND1NV04,VNN1NV04,VNS1NV04aremonolithicdevicesdesignedinSTMicroelectronicsVIPowerM0-3Technology,intendedforreplacementofstandardPowerMOSFETsfromDCupto50KHzapplications. Builtinthermalshutdown,linearcurrentlimitationandovervoltageclampprotect | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
??MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET DESCRIPTION TheVNS1NV04DisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPowerM0-3Technology:theyareintendedforreplacementofstandardPowerMOSFETSfromDCupto50KHzapplications. ■LINEA | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
??MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET DESCRIPTION TheVNS1NV04DisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPowerM0-3Technology:theyareintendedforreplacementofstandardPowerMOSFETSfromDCupto50KHzapplications. ■LINEA | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
??MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET DESCRIPTION TheVNS1NV04DisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPowerM0-3Technology:theyareintendedforreplacementofstandardPowerMOSFETSfromDCupto50KHzapplications. ■LINEA | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET Description TheVNS1NV04DP-EisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPower?M0-3technology:theyareintendedforreplacementofstandardPowerMOSFETsfromDCupto50KHzapplications.Builtin | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET Description TheVNS1NV04DP-EisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPower?M0-3technology:theyareintendedforreplacementofstandardPowerMOSFETsfromDCupto50KHzapplications.Builtin | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS |
產(chǎn)品屬性
- 產(chǎn)品編號:
VND1NV04TR-E
- 制造商:
STMicroelectronics
- 類別:
集成電路(IC) > 配電開關,負載驅(qū)動器
- 系列:
OMNIFET II?, VIPower?
- 包裝:
卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶
- 開關類型:
通用
- 輸出數(shù):
1
- 比率 - 輸入:
1:1
- 輸出配置:
低端
- 輸出類型:
N 通道
- 接口:
開/關
- 電壓 - 負載:
36V(最大)
- 電壓 - 供電 (Vcc/Vdd):
不需要
- 電流 - 輸出(最大值):
1.7A
- 導通電阻(典型值):
250 毫歐(最大)
- 輸入類型:
非反相
- 故障保護:
限流(固定),超溫,過壓
- 工作溫度:
-40°C ~ 150°C(TJ)
- 安裝類型:
表面貼裝型
- 供應商器件封裝:
DPAK
- 封裝/外殼:
TO-252-3,DPak(2 引線 + 接片),SC-63
- 描述:
IC PWR DRIVER N-CHANNEL 1
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ST |
24+ |
標準 |
44551 |
熱賣原裝進口 |
詢價 | ||
ST |
21+ |
TO252 |
2351 |
十年信譽,只做原裝,有掛就有現(xiàn)貨! |
詢價 | ||
ST/意法半導體 |
22+ |
DPAK-2 |
6005 |
原裝正品現(xiàn)貨 可開增值稅發(fā)票 |
詢價 | ||
ST/意法 |
22+ |
TO-252 |
10000 |
原裝正品 |
詢價 | ||
ST |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
STMicroelectronics |
23+ |
D-Pak |
66800 |
原廠授權(quán)一級代理,專注汽車、醫(yī)療、工業(yè)、新能源! |
詢價 | ||
ST |
21+ |
N/A |
6000 |
絕對原裝現(xiàn)貨 |
詢價 | ||
ST |
24+ |
35200 |
一級代理/放心采購 |
詢價 | |||
STM |
24+ |
原廠封裝 |
3206 |
原裝現(xiàn)貨 |
詢價 | ||
STMicroelectronics |
2021+ |
SOIC |
57500 |
科研單位合格供應商!現(xiàn)貨庫存 |
詢價 |
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