首頁(yè) >VNS3NV04DTR-E>規(guī)格書列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
VNS3NV04DTR-E | OMNIFET II fully autoprotected Power MOSFET Description TheVNS3NV04D-EisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPowerM0-3Technology:theyareintendedforreplacementofstandardPowerMOSFETsfromDCupto50KHzapplications.Builtinth | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | |
VNS3NV04DTR-E | 包裝:管件 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 類別:集成電路(IC) 配電開關(guān),負(fù)載驅(qū)動(dòng)器 描述:IC PWR DRIVER N-CHANNEL 1:1 8SO | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | |
??MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET DESCRIPTION TheVNS3NV04DisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPowerM0-3Technology:theyareintendedforreplacementofstandardPowerMOSFETSfromDCupto50KHzapplications.Builtinther | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
??MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET Description TheVNN3NV04,VNS3NV04,VND3NV04VND3NV04-1,aremonolithicdevicesdesignedinSTMicroelectronicsVIPowerM0-3Technology,intendedforreplacementofstandardPowerMOSFETsfromDCupto50kHzapplications. Features ■Linearcurrentlimitation ■Thermalshutdown ■Shortcircuit | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
??MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET Description TheVNN3NV04,VNS3NV04,VND3NV04VND3NV04-1,aremonolithicdevicesdesignedinSTMicroelectronicsVIPowerM0-3Technology,intendedforreplacementofstandardPowerMOSFETsfromDCupto50kHzapplications. Features ■Linearcurrentlimitation ■Thermalshutdown ■Shortcircuit | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
fullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
fullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
??MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET Description TheVNN3NV04,VNS3NV04,VND3NV04VND3NV04-1,aremonolithicdevicesdesignedinSTMicroelectronicsVIPowerM0-3Technology,intendedforreplacementofstandardPowerMOSFETsfromDCupto50kHzapplications. Features ■Linearcurrentlimitation ■Thermalshutdown ■Shortcircuit | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
??MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET DESCRIPTION TheVNS3NV04DisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPowerM0-3Technology:theyareintendedforreplacementofstandardPowerMOSFETSfromDCupto50KHzapplications.Builtinther | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET Description TheVNS3NV04D-EisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPowerM0-3Technology:theyareintendedforreplacementofstandardPowerMOSFETsfromDCupto50KHzapplications.Builtinth | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
fullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS |
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
VNS3NV04DTR-E
- 制造商:
STMicroelectronics
- 類別:
集成電路(IC) > 配電開關(guān),負(fù)載驅(qū)動(dòng)器
- 系列:
OMNIFET II?, VIPower?
- 包裝:
管件
- 開關(guān)類型:
通用
- 輸出數(shù):
2
- 比率 - 輸入:
1:1
- 輸出配置:
低端
- 輸出類型:
N 通道
- 接口:
開/關(guān)
- 電壓 - 負(fù)載:
36V(最大)
- 電壓 - 供電 (Vcc/Vdd):
不需要
- 電流 - 輸出(最大值):
3.5A
- 導(dǎo)通電阻(典型值):
120 毫歐(最大)
- 輸入類型:
非反相
- 故障保護(hù):
限流(固定),超溫,過壓
- 工作溫度:
-40°C ~ 150°C(TJ)
- 安裝類型:
表面貼裝型
- 供應(yīng)商器件封裝:
8-SOIC
- 封裝/外殼:
8-SOIC(0.154",3.90mm 寬)
- 描述:
IC PWR DRIVER N-CHANNEL 1
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ST |
23+ |
SOP8 |
9080 |
原廠原裝正品 |
詢價(jià) | ||
23+ |
SOP-8 |
250000 |
專注原裝正品現(xiàn)貨特價(jià)中量大可定 |
詢價(jià) | |||
ST/意法 |
24+ |
SOP-8 |
495 |
只做原廠渠道 可追溯貨源 |
詢價(jià) | ||
ST |
23+ |
N/A |
10000 |
原裝優(yōu)質(zhì)現(xiàn)貨訂貨渠道商 |
詢價(jià) | ||
ST |
2021+ |
SOP-8 |
6800 |
原廠原裝,歡迎咨詢 |
詢價(jià) | ||
ST |
SOP8 |
3200 |
原裝長(zhǎng)期供貨! |
詢價(jià) | |||
STM |
24+ |
85000 |
詢價(jià) | ||||
ST |
17+ |
PBFREE |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | ||
ST |
16+ |
SOP8 |
8000 |
原裝現(xiàn)貨請(qǐng)來電咨詢 |
詢價(jià) | ||
ST |
2016+ |
SOP8 |
6299 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價(jià) |
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