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VNV35N07

OMNIFET FULLY AUTOPROTECTED POWER MOSFET

Description TheVNP35N07-E,VNB35N07-EandVNV35N07-EaremonolithicdevicesmadeusingSTMicroelectronicsVIPower?technology,intendedforreplacementofstandardPowerMOSFETsinDCto50KHzapplications. Built-inthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthe

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNV35N07

??MNIFET?? FULLY AUTOPROTECTED POWER MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNV35N07

包裝:管件 封裝/外殼:PowerSO-10 裸露底部焊盤 類別:集成電路(IC) 配電開關(guān),負(fù)載驅(qū)動器 描述:IC PWR DRIVER N-CHAN 1:1 PWRSO10

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNV35N07-E

OMNIFET: fully autoprotected Power MOSFET

Description TheVNP35N07-E,VNB35N07-Eand VNV35N07-Earemonolithicdevicesmadeusing STMicroelectronicsVIPower?technology, intendedforreplacementofstandardPower MOSFETsinDCto50KHzapplications. Built-inthermalshutdown,linearcurrentlimitation andovervoltageclampprotect

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNV35N07TR-E

OMNIFET: fully autoprotected Power MOSFET

Description TheVNP35N07-E,VNB35N07-Eand VNV35N07-Earemonolithicdevicesmadeusing STMicroelectronicsVIPower?technology, intendedforreplacementofstandardPower MOSFETsinDCto50KHzapplications. Built-inthermalshutdown,linearcurrentlimitation andovervoltageclampprotect

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNV35N07-E

包裝:卷帶(TR) 封裝/外殼:PowerSO-10 裸露底部焊盤 類別:集成電路(IC) 配電開關(guān),負(fù)載驅(qū)動器 描述:IC PWR DRIVER N-CHAN 1:1 PWRSO10

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNV35N07TR-E

包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 封裝/外殼:PowerSO-10 裸露底部焊盤 類別:集成電路(IC) 配電開關(guān),負(fù)載驅(qū)動器 描述:IC PWR DRIVER N-CHAN 1:1 PWRSO10

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNB35N07

OMNIFETFULLYAUTOPROTECTEDPOWERMOSFET

Description TheVNP35N07-E,VNB35N07-EandVNV35N07-EaremonolithicdevicesmadeusingSTMicroelectronicsVIPower?technology,intendedforreplacementofstandardPowerMOSFETsinDCto50KHzapplications. Built-inthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthe

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNB35N07

??MNIFET??FULLYAUTOPROTECTEDPOWERMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNB35N07-E

??MNIFET??FULLYAUTOPROTECTEDPOWERMOSFET

Description TheVNP35N07-E,VNB35N07-EandVNV35N07-EaremonolithicdevicesmadeusingSTMicroelectronicsVIPower?technology,intendedforreplacementofstandardPowerMOSFETsinDCto50KHzapplications. Built-inthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthe

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNB35N07-E

OMNIFET:fullyautoprotectedPowerMOSFET

Description TheVNP35N07-E,VNB35N07-Eand VNV35N07-Earemonolithicdevicesmadeusing STMicroelectronicsVIPower?technology, intendedforreplacementofstandardPower MOSFETsinDCto50KHzapplications. Built-inthermalshutdown,linearcurrentlimitation andovervoltageclampprotect

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNB35N07TR-E

OMNIFET:fullyautoprotectedPowerMOSFET

Description TheVNP35N07-E,VNB35N07-Eand VNV35N07-Earemonolithicdevicesmadeusing STMicroelectronicsVIPower?technology, intendedforreplacementofstandardPower MOSFETsinDCto50KHzapplications. Built-inthermalshutdown,linearcurrentlimitation andovervoltageclampprotect

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNB35N07TR-E

OMNIFETFULLYAUTOPROTECTEDPOWERMOSFET

Description TheVNP35N07-E,VNB35N07-EandVNV35N07-EaremonolithicdevicesmadeusingSTMicroelectronicsVIPower?technology,intendedforreplacementofstandardPowerMOSFETsinDCto50KHzapplications. Built-inthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthe

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNP35N07

??MNIFET??FULLYAUTOPROTECTEDPOWERMOSFET

DESCRIPTION TheVNP35N07isamonolithicdevicemadeusingSGS-THOMSONVerticalIntelligentPowerM0Technology,intendedforreplacementofstandardpowerMOSFETSinDCto50KHzapplications.Built-inthermalshut-down,linearcurrentlimitationandovervoltageclampprotectthechipinharsh

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNP35N07-E

OMNIFET:fullyautoprotectedPowerMOSFET

Description TheVNP35N07-E,VNB35N07-Eand VNV35N07-Earemonolithicdevicesmadeusing STMicroelectronicsVIPower?technology, intendedforreplacementofstandardPower MOSFETsinDCto50KHzapplications. Built-inthermalshutdown,linearcurrentlimitation andovervoltageclampprotect

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNP35N07-E

OMNIFET:FULLYAUTOPROTECTEDPOWERMOSFET

Description TheVNP35N07-E,VNB35N07-EandVNV35N07-EaremonolithicdevicesmadeusingSTMicroelectronicsVIPower?technology,intendedforreplacementofstandardPowerMOSFETsinDCto50KHzapplications. Built-inthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthe

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNP35N07FI

??MNIFET??FULLYAUTOPROTECTEDPOWERMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNP35N07FI

OMNIFETFULLYAUTOPROTECTEDPOWERMOSFET

Description TheVNP35N07-E,VNB35N07-EandVNV35N07-EaremonolithicdevicesmadeusingSTMicroelectronicsVIPower?technology,intendedforreplacementofstandardPowerMOSFETsinDCto50KHzapplications. Built-inthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthe

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNP35N07TR-E

OMNIFET:fullyautoprotectedPowerMOSFET

Description TheVNP35N07-E,VNB35N07-Eand VNV35N07-Earemonolithicdevicesmadeusing STMicroelectronicsVIPower?technology, intendedforreplacementofstandardPower MOSFETsinDCto50KHzapplications. Built-inthermalshutdown,linearcurrentlimitation andovervoltageclampprotect

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

產(chǎn)品屬性

  • 產(chǎn)品編號:

    VNV35N07

  • 制造商:

    STMicroelectronics

  • 類別:

    集成電路(IC) > 配電開關(guān),負(fù)載驅(qū)動器

  • 系列:

    OMNIFET?, VIPower?

  • 包裝:

    管件

  • 開關(guān)類型:

    通用

  • 輸出數(shù):

    1

  • 比率 - 輸入:

    1:1

  • 輸出配置:

    低端

  • 輸出類型:

    N 通道

  • 接口:

    開/關(guān)

  • 電壓 - 負(fù)載:

    55V(最大)

  • 電壓 - 供電 (Vcc/Vdd):

    不需要

  • 電流 - 輸出(最大值):

    25A

  • 導(dǎo)通電阻(典型值):

    28 毫歐(最大)

  • 輸入類型:

    非反相

  • 故障保護(hù):

    限流(固定),超溫,過壓

  • 安裝類型:

    表面貼裝型

  • 供應(yīng)商器件封裝:

    10-PowerSO

  • 封裝/外殼:

    PowerSO-10 裸露底部焊盤

  • 描述:

    IC PWR DRIVER N-CHAN 1

供應(yīng)商型號品牌批號封裝庫存備注價格
ST意法
20+
HSOP
6588
詢價
STMicroelectronics
23+
SMD-10
7750
全新原裝優(yōu)勢
詢價
ST
24+
SOP-10
5000
詢價
ST
24+
POWRERSOP-10
2987
只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電!
詢價
ST
23+
原廠封裝
13528
振宏微原裝正品,假一罰百
詢價
STMicroelectronics
23+
10-PowerSO
66800
原廠授權(quán)一級代理,專注汽車、醫(yī)療、工業(yè)、新能源!
詢價
ST
20+
na
65790
原裝優(yōu)勢主營型號-可開原型號增稅票
詢價
ST
21+
SOP-10
6000
絕對原裝現(xiàn)貨
詢價
ST
2020+
SOP
16800
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
詢價
STM
24+
SOP-10
2000
全新進(jìn)口原裝現(xiàn)貨熱賣!
詢價
更多VNV35N07供應(yīng)商 更新時間2024-12-25 8:56:00