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首頁 >VNB35N07-E>規(guī)格書列表

零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
VNB35N07-E	文件：153.55 Kbytes Page：13 Pages	??MNIFET?? FULLY AUTOPROTECTED POWER MOSFET Description TheVNP35N07-E,VNB35N07-EandVNV35N07-EaremonolithicdevicesmadeusingSTMicroelectronicsVIPower?technology,intendedforreplacementofstandardPowerMOSFETsinDCto50KHzapplications. Built-inthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthe	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
VNB35N07-E	文件：464.56 Kbytes Page：24 Pages	OMNIFET: fully autoprotected Power MOSFET Description TheVNP35N07-E,VNB35N07-Eand VNV35N07-Earemonolithicdevicesmadeusing STMicroelectronicsVIPower?technology, intendedforreplacementofstandardPower MOSFETsinDCto50KHzapplications. Built-inthermalshutdown,linearcurrentlimitation andovervoltageclampprotect	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
VNB35N07-E	文件：100 bytes Page：1 Pages	包裝：管件封裝/外殼：TO-263-3，D2Pak（2 引線 + 接片），TO-263AB 類別：集成電路（IC）配電開關(guān)，負(fù)載驅(qū)動(dòng)器描述：IC PWR DRIVER N-CHAN 1:1 D2PAK	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
VNB35N07TR-E	文件：464.56 Kbytes Page：24 Pages	OMNIFET:fullyautoprotectedPowerMOSFET Description TheVNP35N07-E,VNB35N07-Eand VNV35N07-Earemonolithicdevicesmadeusing STMicroelectronicsVIPower?technology, intendedforreplacementofstandardPower MOSFETsinDCto50KHzapplications. Built-inthermalshutdown,linearcurrentlimitation andovervoltageclampprotect	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
VNB35N07TR-E	文件：153.65 Kbytes Page：13 Pages	OMNIFETFULLYAUTOPROTECTEDPOWERMOSFET Description TheVNP35N07-E,VNB35N07-EandVNV35N07-EaremonolithicdevicesmadeusingSTMicroelectronicsVIPower?technology,intendedforreplacementofstandardPowerMOSFETsinDCto50KHzapplications. Built-inthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthe	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
VNP35N07	文件：134.79 Kbytes Page：11 Pages	??MNIFET??FULLYAUTOPROTECTEDPOWERMOSFET DESCRIPTION TheVNP35N07isamonolithicdevicemadeusingSGS-THOMSONVerticalIntelligentPowerM0Technology,intendedforreplacementofstandardpowerMOSFETSinDCto50KHzapplications.Built-inthermalshut-down,linearcurrentlimitationandovervoltageclampprotectthechipinharsh	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
VNP35N07-E	文件：464.56 Kbytes Page：24 Pages	OMNIFET:fullyautoprotectedPowerMOSFET Description TheVNP35N07-E,VNB35N07-Eand VNV35N07-Earemonolithicdevicesmadeusing STMicroelectronicsVIPower?technology, intendedforreplacementofstandardPower MOSFETsinDCto50KHzapplications. Built-inthermalshutdown,linearcurrentlimitation andovervoltageclampprotect	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
VNP35N07-E	文件：289.5 Kbytes Page：11 Pages	OMNIFET:FULLYAUTOPROTECTEDPOWERMOSFET Description TheVNP35N07-E,VNB35N07-EandVNV35N07-EaremonolithicdevicesmadeusingSTMicroelectronicsVIPower?technology,intendedforreplacementofstandardPowerMOSFETsinDCto50KHzapplications. Built-inthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthe	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
VNP35N07FI	文件：153.65 Kbytes Page：13 Pages	OMNIFETFULLYAUTOPROTECTEDPOWERMOSFET Description TheVNP35N07-E,VNB35N07-EandVNV35N07-EaremonolithicdevicesmadeusingSTMicroelectronicsVIPower?technology,intendedforreplacementofstandardPowerMOSFETsinDCto50KHzapplications. Built-inthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthe	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
VNP35N07FI	文件：139.31 Kbytes Page：13 Pages	??MNIFET??FULLYAUTOPROTECTEDPOWERMOSFET	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
VNP35N07TR-E	文件：464.56 Kbytes Page：24 Pages	OMNIFET:fullyautoprotectedPowerMOSFET Description TheVNP35N07-E,VNB35N07-Eand VNV35N07-Earemonolithicdevicesmadeusing STMicroelectronicsVIPower?technology, intendedforreplacementofstandardPower MOSFETsinDCto50KHzapplications. Built-inthermalshutdown,linearcurrentlimitation andovervoltageclampprotect	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
VNV35N07	文件：153.65 Kbytes Page：13 Pages	OMNIFETFULLYAUTOPROTECTEDPOWERMOSFET Description TheVNP35N07-E,VNB35N07-EandVNV35N07-EaremonolithicdevicesmadeusingSTMicroelectronicsVIPower?technology,intendedforreplacementofstandardPowerMOSFETsinDCto50KHzapplications. Built-inthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthe	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
VNV35N07	文件：139.31 Kbytes Page：13 Pages	??MNIFET??FULLYAUTOPROTECTEDPOWERMOSFET	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
VNV35N07-E	文件：464.56 Kbytes Page：24 Pages	OMNIFET:fullyautoprotectedPowerMOSFET Description TheVNP35N07-E,VNB35N07-Eand VNV35N07-Earemonolithicdevicesmadeusing STMicroelectronicsVIPower?technology, intendedforreplacementofstandardPower MOSFETsinDCto50KHzapplications. Built-inthermalshutdown,linearcurrentlimitation andovervoltageclampprotect	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
VNV35N07TR-E	文件：464.56 Kbytes Page：24 Pages	OMNIFET:fullyautoprotectedPowerMOSFET Description TheVNP35N07-E,VNB35N07-Eand VNV35N07-Earemonolithicdevicesmadeusing STMicroelectronicsVIPower?technology, intendedforreplacementofstandardPower MOSFETsinDCto50KHzapplications. Built-inthermalshutdown,linearcurrentlimitation andovervoltageclampprotect	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS

產(chǎn)品屬性

產(chǎn)品編號(hào)：
VNB35N07-E
制造商：
STMicroelectronics
類別：
集成電路（IC） > 配電開關(guān)，負(fù)載驅(qū)動(dòng)器
系列：
OMNIFET?, VIPower?
包裝：
管件
開關(guān)類型：
通用
輸出數(shù)：
1
比率 - 輸入：
1：1
輸出配置：
低端
輸出類型：
N 通道
接口：
開/關(guān)
電壓 - 負(fù)載：
55V（最大）
電壓 - 供電 (Vcc/Vdd)：
不需要
電流 - 輸出（最大值）：
25A
導(dǎo)通電阻（典型值）：
28 毫歐（最大）
輸入類型：
非反相
特性：
狀態(tài)標(biāo)志
故障保護(hù)：
限流（固定），超溫，過壓
安裝類型：
表面貼裝型
供應(yīng)商器件封裝：
D2PAK
封裝/外殼：
TO-263-3，D2Pak（2 引線 + 接片），TO-263AB
描述：
IC PWR DRIVER N-CHAN 1

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市萊克訊科技有限公司	VNB35N07-E	ST/意法	21+	NA	12500	只做全新原裝公司現(xiàn)貨特價(jià)	詢價(jià)
深圳市科恒偉業(yè)電子有限公司	VNB35N07-E	STM	21+	SOP	9800	只做原裝正品假一賠十!正規(guī)渠道訂貨!	詢價(jià)
深圳市冠億通科技有限公司	VNB35N07-E	ST(意法)	21+		5000	只做原裝假一罰百可開票可售樣	詢價(jià)
深圳和潤天下電子科技有限公司	VNB35N07-E	ST/意法半導(dǎo)體	22+	D2PAK	6000	原裝正品現(xiàn)貨可開增值稅發(fā)票	詢價(jià)
深圳市柏芯特電子科技有限公司	VNB35N07-E	ST/意法半導(dǎo)體	2023	D2PAK	6000	公司原裝現(xiàn)貨/支持實(shí)單	詢價(jià)
深圳市高捷芯城科技有限公司	VNB35N07-E	ST(意法半導(dǎo)體)	23+	D2PAK	942	特價(jià)優(yōu)勢庫存質(zhì)量保證穩(wěn)定供貨	詢價(jià)
深圳市得捷芯城科技有限公司	VNB35N07-E	ST(意法半導(dǎo)體)	23+	D2PAK	5098	百分百原裝正品,可原型號(hào)開票	詢價(jià)
深圳市匯萊威科技有限公司	VNB35N07-E	ST/意法	2024	TO-263	504015	一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力高端行業(yè)供應(yīng)商	詢價(jià)
柒號(hào)芯城電子商務(wù)(深圳)有限公司	VNB35N07-E	ST	2024+	N/A	70000	柒號(hào)只做原裝現(xiàn)貨價(jià)秒殺全網(wǎng)	詢價(jià)
深圳市一線半導(dǎo)體有限公司	VNB35N07-E	ST	24+	D2PAK	8866		詢價(jià)

更多VNB35N07-E供應(yīng)商更新時(shí)間2025-1-8 14:30:00

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