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VQ100

Military ProASIC3/EL Low Power Flash FPGAs with Flash*Freeze Technology

FeaturesandBenefits HighCapacity ?15kto1MSystemGates ?Upto144kbitsofTrueDual-PortSRAM ?Upto300UserI/Os ReprogrammableFlashTechnology ?130-nm,7-LayerMetal(6Copper),Flash-BasedCMOSProcess ?InstantOnLevel0Support ?Single-ChipSolution

MicrosemiMicrosemi Corporation

美高森美美高森美公司

VQ100

Military ProASIC3/EL Low Power Flash FPGAs with Flash*Freeze Technology

FeaturesandBenefits HighCapacity ?15kto1MSystemGates ?Upto144kbitsofTrueDual-PortSRAM ?Upto300UserI/Os ReprogrammableFlashTechnology ?130-nm,7-LayerMetal(6Copper),Flash-BasedCMOSProcess ?InstantOnLevel0Support ?Single-ChipSolution

MicrosemiMicrosemi Corporation

美高森美美高森美公司

VQ100

ProASIC3L Low Power Flash FPGAs with Flash*Freeze Technology

MicrosemiMicrosemi Corporation

美高森美美高森美公司

VQ1000J

N-Channel 60-V (D-S) MOSFET

FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VQ1000J

N-Channel 60-V (D-S) MOSFET

FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VQ1000P

N-Channel 60-V (D-S) MOSFET

FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VQ1000P

N-Channel 60-V (D-S) MOSFET

FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VQ1001J

Quad N-Channel 30-V (D-S) MOSFETs

features LowOn-Resistance:0.85 LowThreshold:1.4V LowInputCapacitance:38pF FastSwitchingSpeed:9ns LowInputandOutputLeakage benefits LowOffsetVoltage Low-VoltageOperation EasilyDrivenWithoutBuffer High-SpeedCircuits LowErrorVoltage appl

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VQ1001J_V01

Quad N-Channel 30-V (D-S) MOSFETs

features LowOn-Resistance:0.85 LowThreshold:1.4V LowInputCapacitance:38pF FastSwitchingSpeed:9ns LowInputandOutputLeakage benefits LowOffsetVoltage Low-VoltageOperation EasilyDrivenWithoutBuffer High-SpeedCircuits LowErrorVoltage appl

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VQ1001P

Quad N-Channel 30-V (D-S) MOSFETs

features LowOn-Resistance:0.85 LowThreshold:1.4V LowInputCapacitance:38pF FastSwitchingSpeed:9ns LowInputandOutputLeakage benefits LowOffsetVoltage Low-VoltageOperation EasilyDrivenWithoutBuffer High-SpeedCircuits LowErrorVoltage appl

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VQ1006P

N-Channel 80- and 90-V (D-S) MOSFETs

features LowOn-Resistance:3.6 LowThreshold:1.6V LowInputCapacitance:35pF FastSwitchingSpeed:6ns LowInputandOutputLeakage benefits LowOffsetVoltage Low-VoltageOperation EasilyDrivenWithoutBuffer High-SpeedCircuits LowErrorVoltage appli

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VQ1000J

N-Channel 60-V (D-S) MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VQ1000J

N-Channel 60-V (D-S) MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VQ1000J

N-Channel 60-V (D-S) MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VQ1000P

N-Channel 60-V (D-S) MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VQ1000P

N-Channel 60-V (D-S) MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VQ1000P

N-Channel 60-V (D-S) MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VQ1001J

Quad N-Channel 30-V (D-S) MOSFETs

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VQ1001P

Quad N-Channel 30-V (D-S) MOSFETs

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VQ1006

VQ1006 SERIES

AMMSEMI

American Microsemiconductor

詳細(xì)參數(shù)

  • 型號(hào):

    VQ100

  • 功能描述:

    TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 60V V(BR)DSS | 225MA I(D) | DIP

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
SI
23+
DIP
12735
詢價(jià)
SI
1430+
DIP
5800
全新原裝,公司大量現(xiàn)貨供應(yīng),絕對(duì)正品
詢價(jià)
SILICON
23+
DIP/16
7000
絕對(duì)全新原裝!100%保質(zhì)量特價(jià)!請(qǐng)放心訂購(gòu)!
詢價(jià)
SILICIO
2020+
DIP14
3
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
詢價(jià)
SIL
24+
DIP
4650
詢價(jià)
SILICONIX
22+
DIP14
1981
⊙⊙新加坡大量現(xiàn)貨庫(kù)存,深圳常備現(xiàn)貨!歡迎查詢!⊙
詢價(jià)
DG/SIL
24+
DIP
350
詢價(jià)
VISHAY
23+
DIP14
5000
原裝正品,假一罰十
詢價(jià)
SIL
23+
DIP
1010
特價(jià)庫(kù)存
詢價(jià)
DG
2020+
DIP
350000
100%進(jìn)口原裝正品公司現(xiàn)貨庫(kù)存
詢價(jià)
更多VQ100供應(yīng)商 更新時(shí)間2025-1-11 15:16:00